2N4343 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N4343
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.5 W
Voltaje máximo drenador - fuente |Vds|: 25 V
Voltaje máximo fuente - puerta |Vgs|: 25 V
Corriente continua de drenaje |Id|: 0.02 A
Temperatura máxima de unión (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Resistencia entre drenaje y fuente RDS(on): 350 Ohm
Paquete / Cubierta: TO-18
Búsqueda de reemplazo de MOSFET 2N4343
2N4343 Datasheet (PDF)
2n4338 2n4339 2n4340 2n4341.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2N4338/4339/4340/4341Vishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA)2N4338 -0.3 to -1 -50 0.6 0.62N4339 -0.6 to -1.8 -50 0.8 1.52N4340 -1 to -3 -50 1.3 3.62N4341 -2 to -6 -50 2 9FEATURES BENEFITS APPLICATIONSD Low Cutoff Voltage: 2N4338
2n3442-2n4347.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2N34422N4347HIGH POWER INDUSTRIAL TRANSISTORSHIGH POWER INDUSTRIAL TRANSISTORSNPN silicon transistors designed for applications in industrial and commercial equipment including highfidelity audio amplifiers, series and shunts regulators and power switches. Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc 2N4347 Collector-Emitter Susta
2n4338 2n4339 2n4340 2n4341.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
N-Channel JFETLow Noise AmplifierCORPORATION2N4338 2N4341FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)A Exceptionally High Figure of Merit Radiation Immunity Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V Extremely Low Noise and Capacitance Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2n4347.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Power Transistor 2N4347DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for application in industrial and commercialequipment including high fidelity audio amplifier,seriesand shunt regulators and
2n4348.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Power Transistor 2N4348DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular JEDEC TO-3100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .