2N4416AC1C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N4416AC1C
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 35 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 35 V
|Id|ⓘ - Corriente continua de drenaje: 0.01 A
Tjⓘ - Temperatura máxima de unión: 200 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 2.5 V
Cossⓘ - Capacitancia de salida: 2 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 150 Ohm
Paquete / Cubierta: LCC1
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2N4416AC1C Datasheet (PDF)
2n4416ac1a 2n4416ac1b 2n4416ac1c 2n4416ac1d.pdf
SILICON SMALL SIGNAL N-CHANNEL JFET 2N4416AC1 Low Noise, High Gain. Hermetic Surface Mounted Package. Designed For VHF/UHF Amplifiers, Oscillators And Mixers. Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VDS Drain Source Voltage 35V VGS Gate Source Voltage -35V VGD Gate Drain Voltage -35V IG
2n4416acsm 2n4416csm.pdf
2N4416CSMA2N4416ACSMSMALL SIGNAL NCHANNEL JFET IN AHERMETICALLY SEALEDCERAMIC SURFACE MOUNT PACKAGEMECHANICAL DATADimensions in mm (inches)FOR HIGH RELIABILITY APPLICATIONS0.51 0.10(0.02 0.004) 0.31rad.(0.012)FEATURES3 HERMETIC CERAMIC SURFACE MOUNTPACKAGE (SOT23 COMPATIBLE)21 CECC SCREENING OPTIONS1.91 0.10 SPACE QUALITY LEVEL OPT
2n4416 2n4416a sst4416.pdf
2N4416/2N4416A/SST4416Vishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)2N4416 -v6 -30 4.5 52N4416A -2.5 to -6 -35 4.5 5SST4416 -v6 -30 4.5 5FEATURES BENEFITS APPLICATIONSD Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/Mixer2N4416/A, Gps 13 dB (typ) @D Very High System Sensitiv
2n4416a.pdf
2N4416A2N4416ASMALL SIGNAL NCHANNEL JFET THAT ISDESIGNED TO PROVIDE HIGHMECHANICAL DATAPERFORMANCE AMPLIFICATION ATDimensions in mm (inches)HIGH FREQUENCIES4.95 (0.195)4.52 (0.178)4.95 (0.195)4.52 (0.178)FEATURES EXCELLENT HIGH FREQUENCY GAINS0.48 (0.019)0.41 (0.016) CECC SCREENING OPTIONSdia. SPACE QUALITY LEVEL OPTIONS2.54 (0.100)Nom.
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918