2N4416CSM Todos los transistores

 

2N4416CSM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N4416CSM
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 0.01 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 1 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 150 Ohm
   Paquete / Cubierta: LCC1

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2N4416CSM Datasheet (PDF)

 ..1. Size:27K  semelab
2n4416acsm 2n4416csm.pdf

2N4416CSM
2N4416CSM

2N4416CSMA2N4416ACSMSMALL SIGNAL NCHANNEL JFET IN AHERMETICALLY SEALEDCERAMIC SURFACE MOUNT PACKAGEMECHANICAL DATADimensions in mm (inches)FOR HIGH RELIABILITY APPLICATIONS0.51 0.10(0.02 0.004) 0.31rad.(0.012)FEATURES3 HERMETIC CERAMIC SURFACE MOUNTPACKAGE (SOT23 COMPATIBLE)21 CECC SCREENING OPTIONS1.91 0.10 SPACE QUALITY LEVEL OPT

 8.1. Size:81K  vishay
2n4416 2n4416a sst4416.pdf

2N4416CSM
2N4416CSM

2N4416/2N4416A/SST4416Vishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)2N4416 -v6 -30 4.5 52N4416A -2.5 to -6 -35 4.5 5SST4416 -v6 -30 4.5 5FEATURES BENEFITS APPLICATIONSD Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/Mixer2N4416/A, Gps 13 dB (typ) @D Very High System Sensitiv

 8.2. Size:82K  central
2n4416-a.pdf

2N4416CSM
2N4416CSM

TM2N4416Central2N4416ASemiconductor Corp.N-CHANNEL JFETDESCRIPTION:The CENTRAL SEMICONDUCTOR 2N4416 and2N4416A are silicon N-Channel Junction FieldEffect Transistors designed for VHF amplifier andmixer applications.MARKING CODE:Full Part NmberJEDEC TO-72 CASEMAXIMUM RATINGS: (TA=25C)SYMBOL 2N4416 2N4416A UNITSGate-Drain Voltage VGD 30 35 VGate-Source Voltage

 8.3. Size:17K  semelab
2n4416a.pdf

2N4416CSM
2N4416CSM

2N4416A2N4416ASMALL SIGNAL NCHANNEL JFET THAT ISDESIGNED TO PROVIDE HIGHMECHANICAL DATAPERFORMANCE AMPLIFICATION ATDimensions in mm (inches)HIGH FREQUENCIES4.95 (0.195)4.52 (0.178)4.95 (0.195)4.52 (0.178)FEATURES EXCELLENT HIGH FREQUENCY GAINS0.48 (0.019)0.41 (0.016) CECC SCREENING OPTIONSdia. SPACE QUALITY LEVEL OPTIONS2.54 (0.100)Nom.

 8.4. Size:579K  semelab
2n4416ac1a 2n4416ac1b 2n4416ac1c 2n4416ac1d.pdf

2N4416CSM
2N4416CSM

SILICON SMALL SIGNAL N-CHANNEL JFET 2N4416AC1 Low Noise, High Gain. Hermetic Surface Mounted Package. Designed For VHF/UHF Amplifiers, Oscillators And Mixers. Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VDS Drain Source Voltage 35V VGS Gate Source Voltage -35V VGD Gate Drain Voltage -35V IG

 8.5. Size:49K  semelab
2n4416dcsm.pdf

2N4416CSM
2N4416CSM

2N4416DCSMSEMELABSMALL SIGNAL DUALNCHANNEL JFET IN AHERMETICALLY SEALEDCERAMIC SURFACE MOUNT PACKAGEFOR HIGH RELIABILITY APPLICATIONSMECHANICAL DATADimensions in mm (inches)FEATURES1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005) HERMETIC CERAMIC SURFACE MOUNTPACKAGE2 3 CECC SCREENING OPTIONS1 4A SPACE

 8.6. Size:23K  calogic
2n4416-a pn4416.pdf

2N4416CSM
2N4416CSM

N-Channel JFETHigh Frequency AmplifierCORPORATION2N4416 / 2N4416A / PN4416FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)A Low Noise Low Feedback Capacitance Gate-Source or Gate-Drain Voltage Low Output Capacitance 2N4416, PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V High Transconductance 2N4416A . . . .

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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