2N4416DCSM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N4416DCSM

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 0.03 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 150 Ohm

Encapsulados: LCC2

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2N4416DCSM datasheet

 ..1. Size:49K  semelab
2n4416dcsm.pdf pdf_icon

2N4416DCSM

2N4416DCSM SEME LAB SMALL SIGNAL DUAL N CHANNEL J FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) HERMETIC CERAMIC SURFACE MOUNT PACKAGE 2 3 CECC SCREENING OPTIONS 1 4 A SPACE

 8.1. Size:81K  vishay
2n4416 2n4416a sst4416.pdf pdf_icon

2N4416DCSM

2N4416/2N4416A/SST4416 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N4416 -v6 -30 4.5 5 2N4416A -2.5 to -6 -35 4.5 5 SST4416 -v6 -30 4.5 5 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain D Wideband High Gain D High-Frequency Amplifier/Mixer 2N4416/A, Gps 13 dB (typ) @ D Very High System Sensitiv

 8.2. Size:82K  central
2n4416-a.pdf pdf_icon

2N4416DCSM

TM 2N4416 Central 2N4416A Semiconductor Corp. N-CHANNEL JFET DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4416 and 2N4416A are silicon N-Channel Junction Field Effect Transistors designed for VHF amplifier and mixer applications. MARKING CODE Full Part Nmber JEDEC TO-72 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL 2N4416 2N4416A UNITS Gate-Drain Voltage VGD 30 35 V Gate-Source Voltage

 8.3. Size:17K  semelab
2n4416a.pdf pdf_icon

2N4416DCSM

2N4416A 2N4416A SMALL SIGNAL N CHANNEL J FET THAT IS DESIGNED TO PROVIDE HIGH MECHANICAL DATA PERFORMANCE AMPLIFICATION AT Dimensions in mm (inches) HIGH FREQUENCIES 4.95 (0.195) 4.52 (0.178) 4.95 (0.195) 4.52 (0.178) FEATURES EXCELLENT HIGH FREQUENCY GAINS 0.48 (0.019) 0.41 (0.016) CECC SCREENING OPTIONS dia. SPACE QUALITY LEVEL OPTIONS 2.54 (0.100) Nom.

Otros transistores... 2N4393DCSM, 2N4416A, 2N4416AC1A, 2N4416AC1B, 2N4416AC1C, 2N4416AC1D, 2N4416ACSM, 2N4416CSM, IRLZ44N, 2N4445, 2N4446, 2N4447, 2N4448, 2N5114E3, 2N5114UB, 2N5114UBE3, 2N5115E3