2N5115E3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5115E3

Tipo de FET: JFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 0.06 A

Tjⓘ - Temperatura máxima de unión: 200 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 100 Ohm

Encapsulados: TO-18

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2N5115E3 datasheet

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2N5115E3

2N5114 thru 2N5116 Screening in reference to Available on P-CHANNEL J-FET MIL-PRF-19500 commercial versions available DESCRIPTION This leaded device is available in high-reliability equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important For the latest infor

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2N5115E3

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

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2N5115E3

P-Channel JFET Switch CORPORATION 2N5114 2N5116 GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise noted) A Ideal for inverting switching or "Virtual Gnd" switching into inverting input of Op. Amp. No driver is required and 10VAC Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V signals can be handled using only +5V logic (TTL or CMOS). G

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2N5115E3

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 DEVICES LEVELS 2N5114 MQ = JAN Equivalent 2N5115 MX = JANTX Equivalent 2N5116 MV = JANTXV Equivalent ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test C

MOSTRAR MÁS

Otros transistores... 2N4416DCSM, 2N4445, 2N4446, 2N4447, 2N4448, 2N5114E3, 2N5114UB, 2N5114UBE3, AON6414A, 2N5115UB, 2N5115UBE3, 2N5116E3, 2N5116UB, 2N5116UBE3, 2N5163, 2N6849HP, 2N6849U