2N5115E3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5115E3
Tipo de FET: JFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 0.06 A
Tjⓘ - Temperatura máxima de unión: 200 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 5 V
trⓘ - Tiempo de subida: 20 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 100 Ohm
Paquete / Cubierta: TO-18
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2N5115E3 Datasheet (PDF)
2n5114e3 2n5115e3 2n5116e3.pdf
2N5114 thru 2N5116 Screening in reference to Available on P-CHANNEL J-FET MIL-PRF-19500 commercial versions available DESCRIPTION This leaded device is available in high-reliability equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest infor
2n5114 2n5115 2n5116.pdf
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2n5114 2n5115 2n5116.pdf
P-Channel JFET SwitchCORPORATION2N5114 2N5116GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)AIdeal for inverting switching or "Virtual Gnd" switching intoinverting input of Op. Amp. No driver is required and 10VAC Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30Vsignals can be handled using only +5V logic (TTL or CMOS). G
mx2n5114 mx2n5115 mx2n5116.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 DEVICES LEVELS 2N5114 MQ = JAN Equivalent 2N5115 MX = JANTX Equivalent 2N5116 MV = JANTXV EquivalentABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test C
2n5114ub 2n5114ube3 2n5115ub 2n5115ube3 2n5116ub 2n5116ube3.pdf
2N5114UB thru 2N5116UB Screening in reference to Available on P-CHANNEL J-FET MIL-PRF-19500 commercial versions available DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For t
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Recientemente añadidas las descripciónes de los transistores:
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