2N7002-7-F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N7002-7-F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.37 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.17 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3 nS

Cossⓘ - Capacitancia de salida: 11 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm

Encapsulados: SOT-23

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2N7002-7-F datasheet

 ..1. Size:127K  diodes
 2n7002-7-f 2n7002-7.pdf pdf_icon

2N7002-7-F

2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Gate Threshold Voltage TA = 25 C Low Input Capacitance 60V 7.5 @ VGS = 5V 210mA Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Dev

 7.1. Size:276K  philips
 2n7002-03.pdf pdf_icon

2N7002-7-F

2N7002 N-channel enhancement mode field-effect transistor Rev. 03 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability 2N7002 in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package. 3.

 7.2. Size:936K  kexin
 2n7002-3.pdf pdf_icon

2N7002-7-F

SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 Features 3 High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable 1 2 High saturation current capability +0.02 +0.1 0.15 -0.02 0.95-0.1 +0.1 1.9-0.2 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings

 7.3. Size:106K  comchip
 2n7002-g.pdf pdf_icon

2N7002-7-F

MOSFET 2N7002-G (N-Channel) RoHS Device Features SOT-23 Power dissipation 0.35W 0.119(3.00) 0.110(2.80) D Equivalent Circuit 0.056(1.40) 0.047(1.20) D G S 0.083(2.10) G Gate 0.066(1.70) 0.006(0.15) S Source 0.002(0.05) G D Drain 0.044(1.10) 0.103(2.60) 0.035(0.90) 0.086(2.20) S 0.006(0.15)max 0.020(0.50) Maximum Ratings (at TA=25 C) 0.013(0.35) Symbol 0.00

MOSTRAR MÁS

Otros transistores... 2N6898, 2N7000CSM, 2N7000G, 2N7000RLRA, 2N7000RLRAG, 2N7000RLRMG, 2N7000RLRPG, 2N7002-7, IRFP260, 2N7002BKMB, 2N7002C1A, 2N7002C1B, 2N7002C1C, 2N7002C1D, 2N7002CSM, 2N7002DCSM, 2N7002DSGP