2N7002BKMB MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N7002BKMB
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.36 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.45 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 7 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
Encapsulados: SOT-883B
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2N7002BKMB datasheet
2n7002bkmb.pdf
2N7002BKMB 60 V, single N-channel Trench MOSFET Rev. 2 13 June 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Logic-level compa
2n7002bkt.pdf
2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Rev. 1 15 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technol
t2n7002bk.pdf
T2N7002BK MOSFETs Silicon N-Channel MOS T2N7002BK T2N7002BK T2N7002BK T2N7002BK 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching 2. Features 2. Features 2. Features 2. Features (1) ESD(HBM) level 2 kV (2) Low drain-source on-resistance RDS(ON) = 1.05 (typ.) (@VGS = 10 V) RDS(ON) = 1.15 (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2
2n7002bks.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
Otros transistores... 2N7000CSM, 2N7000G, 2N7000RLRA, 2N7000RLRAG, 2N7000RLRMG, 2N7000RLRPG, 2N7002-7, 2N7002-7-F, 4435, 2N7002C1A, 2N7002C1B, 2N7002C1C, 2N7002C1D, 2N7002CSM, 2N7002DCSM, 2N7002DSGP, 2N7002EGP
History: IRF630B
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