2N7002C1D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N7002C1D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 40 V

|Id|ⓘ - Corriente continua de drenaje: 0.115 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 25 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm

Encapsulados: SOT-23

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2N7002C1D datasheet

 ..1. Size:329K  semelab
 2n7002c1c 2n7002c1d.pdf pdf_icon

2N7002C1D

N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002C1A / 2N7002C1B, 2N7002C1C / 2N7002C1D VDSS = 60V , ID = 115mA, RDS(ON) = 7.5 Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available Variants C1C & C1D with solder dip finished pads (63Sn

 6.1. Size:289K  semelab
 2n7002c1a 2n7002c1b.pdf pdf_icon

2N7002C1D

N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002C1 VDSS = 60V , ID = 115mA, RDS(ON) = 7.5 Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VDS Drain Source Voltage 6

 7.1. Size:76K  philips
 2n7002ck.pdf pdf_icon

2N7002C1D

2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features Logic-level compatible Very fast switching Trench MOSFET

 7.2. Size:585K  nxp
 2n7002ck.pdf pdf_icon

2N7002C1D

2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features Logic-level compatible Very fast switching Trench MOSFET

MOSTRAR MÁS

Otros transistores... 2N7000RLRMG, 2N7000RLRPG, 2N7002-7, 2N7002-7-F, 2N7002BKMB, 2N7002C1A, 2N7002C1B, 2N7002C1C, 13N50, 2N7002CSM, 2N7002DCSM, 2N7002DSGP, 2N7002EGP, 2N7002ESEGP, 2N7002ESGP, 2N7002-G, 2N7002GP