2N7002DSGP Todos los transistores

 ..1. Size:147K  chenmko
 2n7002dsgp.pdf

CHENMKO ENTERPRISE CO.,LTD 2N7002DSGP SURFACE MOUNT Dual N-Channel Enhancement MOS FET VOLTAGE 50 Volts CURRENT 0.51 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. FEATURE SC-74/SOT-457 * Small surface mounting type. (SC-74/SOT-457) * High density cell design for low RDS(ON). * Suitable for high packing density. (1) (6) *

 7.1. Size:257K  fairchild semi
 2n7002dw.pdf

October 2007 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant SC70-6 (SOT363) 1 1 Marking 2N Absolute Maximum Ratings * Ta = 25 C un

 7.2. Size:84K  diodes
 2n7002dw.pdf

2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case SOT-363 Low On-Resistance Case Material Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020 Low Input Capacitance Termina

 7.3. Size:443K  infineon
 2n7002dw.pdf

2N7002DW OptiMOS Small-Signal-Transistor Product Summary Features VDS 60 V Dual N-channel RDS(on),max VGS=10 V 3 W Enhancement mode Logic level VGS=4.5 V 4 Avalanche rated ID 0.3 A Fast switching Qualified according to AEC Q101 PG-SOT363 100% lead-free; RoHS compliant 6 5 4 Halogen-free according to IEC61249-2-21 1 2 3 Type

 7.4. Size:909K  mcc
 2n7002dw.pdf

MCC Micro Commercial Components TM 2N7002DW 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 N-Channel MOSFET High density cell design for low RDS(ON) Rugged and r

 7.5. Size:435K  onsemi
 2n7002dw.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.6. Size:285K  utc
 2n7002dw.pdf

UNISONIC TECHNOLOGIES CO., LTD 2N7002DW Power MOSFET 300mA, 60V DUAL N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON) * Voltage Co

 7.7. Size:16K  semelab
 2n7002dcsm.pdf

2N7002DCSM MECHANICAL DATA Dimensions in mm (inches) DUAL N CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) FEATURES 2 3 1 4 V(BR)DSS = 60V A 0.23 6 5 rad. (0.009) RDS(ON) = 7.5 6.22 0.13 A = 1.27 0.13 (0.05 0.005) (0.245 0.005) ID = 0.115A CERAMIC LCC2 PA

 7.8. Size:247K  secos
 s2n7002dw.pdf

S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free SOT-363 MECHANICAL DATA Case SOT-363 Molded Plastic. Case Material-UL Flammability Rating 94V-0 Terminals Solderable per MIL-STD-202, Method 208 Weight 0.006 grams(approx.) DEVICE MARKING 702 PACKAGE INF

 7.9. Size:1426K  jiangsu
 2n7002dw.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs 2N7002DW Dual N-channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-363 5 @10V 60V 115mA @5V 7 APPLICATION FEATURE High density cell design for low RDS(ON) Load Switch for Portable Devices DC/DC Converter Voltage controlled small signal switch Rugged and reliable High

 7.10. Size:212K  wietron
 2n7002dw.pdf

2N7002DW Dual N-Channel MOSFET 6 5 4 1 2 3 Features * We declare that the material of product are Halogen Free and SOT-363(SC-88) compliance with RoHS requirements. * ESD Protected 1000V 3 2 1 D2 G1 S1 S2 G2 D1 4 5 6 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Drain-Gate Voltage RGS

 7.11. Size:375K  willas
 2n7002dw1t1.pdf

FM120-M WILLAS THRU 2N7002DW1T1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Small Signal MOSFET 115 mAmps,60 Volts SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers N Channel SOT-363 better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted app

 7.12. Size:570K  lrc
 l2n7002dw1t1g s-l2n7002dw1t1g.pdf

L2N7002DW1T1G S-L2N7002DW1T1G Small Signal MOSFET 115 mAmps, 60V N Channel SC-88 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. ESD Protected 1000V 2. DE

 7.13. Size:446K  lrc
 l2n7002dmt1g.pdf

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002DMT1G N Channel SC 74 We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS Rating Symbol Value Unit SC-74 Drain Source Voltage VDSS 60 Vdc Drain Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc 115 mAMPS Drain Current ID 115 mAdc Continuous TC = 25 C (Note 1

 7.14. Size:296K  lrc
 l2n7002dw1t1g.pdf

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps,60 Volts L2N7002DW1T1G N Channel SC-88 Pb-Free Package is Available. ESD Protected 1000V MAXIMUM RATINGS Rating Symbol Value Unit 3 2 1 Drain-Source Voltage VDSS 60 Vdc D2 G1 S1 Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc Drain Current ID 115 mAdc ID 75 - Continuous TC = 25 C (Note 1) IDM 800 - Continuo

 7.15. Size:1367K  kexin
 2n7002dw.pdf

 7.16. Size:174K  panjit
 2n7002dw.pdf

2N7002DW 60V N-Channel Enhancement Mode MOSFET FEATURES RDS(ON), VGS@10V,IDS@500mA=5 RDS(ON), VGS@4.5V,IDS@75mA=7.5 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Battery Operated Systems, Solid-State Relays Drivers Relays, Displays, Lamps, Solenoids, Memories, etc. In compliance with EU Ro

 7.17. Size:454K  ait semi
 am2n7002dw.pdf

AiT Semiconductor Inc. AM2N7002DW www.ait-ic.com N-CHANNEL MOSFET SMALL SIGNAL MOSFET 115mA, 60 VOLTS DESCRIPTION FEATURES Available in SOT-363 package. ESD Protected 1000V Available in SOT-363 package ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number SOT-363 AM2N7002DWC6R C6 (SC70-6) AM2N7002DWC6VR V Halogen free Package Note R Tape & Reel SPQ

 7.18. Size:1630K  matsuki electric
 me2n7002d.pdf

ME2N7002D N-Channel MOSFET ESD Protected GENERAL DESCRIPTION FEATURES Simple Drive Requirement The ME2N7002D is the N-Channel logic enhancement mode power Small Package Outline field effect transistors are produced using high cell density , DMOS ROHS Compliant trench technology. This high density process is especially tailored to ESD Rating = 2000V HBM min

 7.19. Size:311K  tiptek
 s2n7002dm.pdf

S2N7002DM SMALL SIGNAL MOSFET 115mA 60V N-CHANNEL FEATURES FAST SWITCHING SPEED. EASILY DESIGNED DRIVE CIRCUITS. LOW ON-RESISTANCE ESD PROTECTED 1000V MECHANICAL DATA Pb-Free PACKAGE IS AVAILABLE. Pb Free S2N7002DM Halogen Free S2N7002DM-H CASE SOT-23-6L DIMENSIONS IN MILLIMETERS AND (INCHES) ABSOLUTE MAXIMUM RATINGS RATINGS AT 25 C AMBIEN

 7.20. Size:413K  cn yangzhou yangjie elec
 2n7002dw.pdf

RoHS COMPLIANT 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GS General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input /