2N7002SGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N7002SGP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.25 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 0.115 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Tiempo de subida (tr): 40 nS
Conductancia de drenaje-sustrato (Cd): 25 pF
Resistencia entre drenaje y fuente RDS(on): 7.5 Ohm
Paquete / Cubierta: SOT-363
Búsqueda de reemplazo de MOSFET 2N7002SGP
2N7002SGP Datasheet (PDF)
2n7002sgp.pdf
CHENMKO ENTERPRISE CO.,LTD2N7002SGPSURFACE MOUNTDual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 115 mAmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363)* High density cell design for low RDS(ON). * Suitable for high packing density.(1)(S1)
h2n7002sn.pdf
Spec. No. : MOS200605HI-SINCERITYIssued Date : 2006.02.01Revised Date : 2006.02.07MICROELECTRONICS CORP.Page No. : 1/5H2N7002SN Pin Assignment & SymbolH2N7002SN33-Lead Plastic SOT-323Package Code: SNN-Channel MOSFET (60V, 0.2A)Pin 1: Gate 2: Source 3: Drain21DDescriptionGN-channel enhancement-mode MOS transistor.SAbsolute Maximum RatingsDrain-Source Vol
l2n7002sdw1t1g l2n7002sdw1t3g.pdf
L2N7002SDW1T1GS-L2N7002SDW1T1GSmall Signal MOSFET380 mA, 60V NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD protectedLow RDS
l2n7002swt1g s-l2n7002swt1g.pdf
L2N7002SWT1GS-L2N7002SWT1GSmall Signal MOSFET380 mAmps, 60 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.ESD protectedLow R
l2n7002slt1g l2n7002slt3g.pdf
L2N7002SLT1GS-L2N7002SLT1GSmall Signal MOSFET380 mAmps, 60V NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.ESD protectedLow RDS
2n7002ssgp.pdf
CHENMKO ENTERPRISE CO.,LTD2N7002SSGPSURFACE MOUNTDual N-Channel Enhancement MOS FET VOLTAGE 50 Volts CURRENT 0.51 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363)* High density cell design for low RDS(ON). * Suitable for high packing density.(1)(G1)
2n7002sesgp.pdf
CHENMKO ENTERPRISE CO.,LTD2N7002SESGPSURFACE MOUNT Dual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 0.64 AmpereAPPLICATION* Relays, Solenoids, Lamps, Hammers Display deivers. * High saturation current capability. * Battery Operated Systems. FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363). * 60V/0.5A, RDS(ON)=2ohm at VGS=10V* Super high d
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