SFS9530 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SFS9530

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 39 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22 nS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: TO220F

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SFS9530 datasheet

 ..1. Size:503K  samsung
 sfs9530.pdf pdf_icon

SFS9530

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = -8 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -100V Low RDS(ON) 0.225 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Rati

 9.1. Size:502K  samsung
 sfs9510.pdf pdf_icon

SFS9530

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = -2.5 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -100V Low RDS(ON) 0.912 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ra

 9.2. Size:493K  samsung
 sfs9520.pdf pdf_icon

SFS9530

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.6 Rugged Gate Oxide Technology Lower Input Capacitance ID = -4.6 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -100V Low RDS(ON) 0.444 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ra

 9.3. Size:501K  samsung
 sfs9540.pdf pdf_icon

SFS9530

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = -10.7 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -100V Low RDS(ON) 0.161 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ra

MOSTRAR MÁS

Otros transistores... SFR9130, SFR9210, SFR9214, SFR9220, SFR9224, SFS2955, SFS9510, SFS9520, 60N06, SFS9540, SFS9610, SFS9614, SFS9620, SFS9624, SFS9630, SFS9634, SFS9640