2N7002TGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CHENMKO ENTERPRISE CO.,LTD2N7002TGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.250 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-75/SOT-416FEATURE* Small surface mounting type. (SC-75/SOT-416)* High density cell design for low RDS(ON). * Suitable for high packing den

October 20072N7002TN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantDSGSOT - 523FMarking : AAAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol P

2N7002TN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT523 Low Gate Threshold Voltage Case Material: Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020D Fast Switching Speed Terminals: Sol

Features Maximum Ratings

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD 2N7002T Power MOSFET 300mA, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002T uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON)* Voltage Contr

2N7002T 0.115A , 60V , RDS(ON) 7.2 N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523 FEATURES High density cell design for low RDS(ON). A Voltage controlled small signal switch. M Rugged and reliable. 33 High saturation current capability. Top View C B11 2

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2N7002T MOSFET (N-Channel) ID V(BR)DSS RDS(on)MAX SOT-523 5@10V60V115mA 1. GATE 7@5V2. SOURCE 3. DRAIN APPLICATIONFEATURE Load Switch for Portable Devices High density cell design for low RDS(ON) DC/DC Converter Voltage controlled small signal switch

2N7002TN-Channel ENHANCEMENT MODEPOWER MOSFET31. GATE1P b Lead(Pb)-Free22. SOURCE3. DRAIN SOT-523(SC-75)FEATURES:* Fast Switching Speed* Low On-Resistance* Low Voltage DriverAPPLICATIONS:* Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories* Battery Operated Systems* Power Supply Converter Circuits* Load/Power Switching Cell Phones, PagersMaximu

FM120-M WILLASTHRU2N7002TSOT-523 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Ba tch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HMOSFET (N-Channel) nted application in order to Low prof

SMD Type MOSFETN-Channel MOSFET2N7002TESOT-523 Unit:mm+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.052 1 Features VDS (V) = 60V ID = 0.29 A3 RDS(ON) 2 (VGS = 20V) 0.30.05+0.10.5 -0.1 RDS(ON) 7.5 (VGS = 5V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source

SMD Type MOSFETN-Channel MOSFET2N7002TSOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.052 1 Features VDS (V) = 60V ID = 115mA3 RDS(ON) 5 (VGS = 10V)0.30.05 RDS(ON) 7 (VGS = 5V)+0.10.5-0.11. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source

2N7002TB60V N-CHANNEL ENHANCEMENT MODE MOSFETUnitinch(mm)SOT-523FEATURES RDS(ON), VGS@10V,IDS@500mA=5 RDS(ON), VGS@4.5V,IDS@50mA=7.5 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.0.

CHENMKO ENTERPRISE CO.,LTD2N7002TESGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpereAPPLICATION* Relay driver* High speed line driver* Logic level transistorSC-75/SOT-416FEATURE* Small surface mounting type. (SC-75/SOT-416)* High density cell design for low RDS(ON). * Suitable for high packing density.0.10.20.

2N700260V SOT23 N-channel enhancement mode MOSFET SummaryV(BR)DSS RDS(on) ( )ID (A)7.5 @ VGS= 10V 0.5607.5 @ VGS= 5V 0.05DescriptionA small signal MOSFET for general purpose switching applications.FeaturesD Fast switching speed Low gate drive capability SOT23 packageGApplicationsS General switching applicationsOrdering informationSDevice Reel

2N7002TN-Channel MOSFETSOT-523 Plastic-Encapsulate MOSFETSID V(BR)DSS RDS(on)MAX SOT-523 1. GATE 2. SOURCE 3. DRAIN APPLICATIONFEATURE High density cell design for low RDS(ON) Voltage controlled

TAK CHEONG SEMICONDUCTOR150mW SOT-523 SURFACE MOUNT Plastic Package Green Product N-Channel MOSFET 3 Absolute Maximum Ratings TA = 25C unless otherwise noted Symbol Parameter Value Units2 VDS Drain-Source Voltage 60 V 1. Gate VGS Continuous Gate-Source Voltage 20V V 2. Source 1 3. Drain ID Continuous Drain Current 115 mA SOT-523 PD Power Dissipation 1

2N7002Twww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1