2N7002VGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N7002VGP
   Código: *V7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.28 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm
   Paquete / Cubierta: SOT-563

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2N7002VGP Datasheet (PDF)

..1. Size:166K chenmko
2n7002vgp.pdf

CHENMKO ENTERPRISE CO.,LTD2N7002VGPSURFACE MOUNTDual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 0.280 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.FEATURESOT-563* Small surface mounting type. (SOT-563)* High density cell design for low RDS(ON)* Suitable for high packing density.(1)(S1) (D1)(6)* Rug

7.1. Size:506K fairchild semi
2n7002v-va.pdf

April 20102N7002V/VAN-Channel Enhancement Mode Field Effect TransistorFeatures Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant(Pin4)SOT-563FMarking : AB Marking : AC* Pin1 and Pin4 are ex

7.2. Size:124K diodes
2n7002vc-vac.pdf

2N7002VC/VACDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance T

7.3. Size:138K diodes
2n7002vc 2n7002vac.pdf

2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual N-Channel MOSFET Case: SOT563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal Connection

7.4. Size:1871K jiangsu
2n7002v.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate MOSFETS 2N7002V MOSFET (N-Channel)ID V(BR)DSS RDS(on)MAX SOT-563 62.5@10V560V4115mA3@5V123FEATURE APPLICATION Dual N-channel MOSFET Load Switch for Portable Devices DC/DC Converter Low on-resistance Low gate threshold voltage Low input capacitance

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