2N7002WSK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2N7002WSK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR FEATURES LOW ON-RESISTANCE FAST SWITCHING SPEED LOW VOLTAGE DRIVE ESD PROTECTED GATE PORTABLE APPLICATIONS SUCH AS CELL PHONES, MEDIA PLAYERS, DIGITAL CAMERAS, PDAS , VIDEO GAMES, HAND HELD COMPUTERS, ETC. MECHANICAL DATA Pb-Free PACKAGE IS AVAILABLE. Pb Free: 2N7002WSK H

February 20102N7002WN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantDSGSOT-323Marking : 2NAbsolute Maximum Ratings * TA = 25C unless otherwise notedSymbol Par

2N7002WN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low-On Resistance Case: SOT-323 Low Gate Threshold Voltage Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Le

MCCTM Micro Commercial Components20736 Marilla Street Chatsworth 2N7002WMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low ON-ResistanceN-Channel Low Input Capacitance Low Gate Threshold VoltageEnhancement Mode Fast Switching SpeedField Effect Transistor Low Input/Output Leakage Epoxy meets UL 94 V-0 flamma

MCCTM Micro Commercial Components20736 Marilla Street Chatsworth 2N7002WMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low ON-ResistanceN-Channel Low Input Capacitance Low Gate Threshold VoltageEnhancement Mode Fast Switching SpeedField Effect Transistor Low Input/Output Leakage Epoxy meets UL 94 V-0 flamma

2N7002W, 2V7002WSmall Signal MOSFET60 V, 340 mA, Single, N-Channel, SC-70Features ESD Protected Low RDS(on)www.onsemi.com Small Footprint Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring UniqueV(BR)DSS RDS(on) MAX ID MAXSite and Control Change Requirements; AEC-Q101 Qualified and(Note 1)PPAP Capable1.6 W @ 10 V These Devi

2N7002W, 2V7002WSmall Signal MOSFET60 V, 340 mA, Single, N-Channel, SC-70Features ESD Protected Low RDS(on)www.onsemi.com Small Footprint Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring UniqueV(BR)DSS RDS(on) MAX ID MAXSite and Control Change Requirements; AEC-Q101 Qualified and(Note 1)PPAP Capable1.6 W @ 10 V These Devi

UNISONIC TECHNOLOGIES CO., LTD 2N7002W Preliminary Power MOSFET 300mA, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON)* Volta

S2N7002W 115 mA, 60 V, RDS(ON) = 7.5 N-Ch Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 Low on-resistance Low gate threshold voltage Low input capacitance Fast switching speed Low input/output leakage Ultra-small surface mount package AL33Top

2 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002W MOSFET (N-Channel) ID V(BR)DSS RDS(on)MAX SOT-323 5@10V360V 115mA7@5V1. GATE 2. SOURCE 3. DRAIN 12APPLICATIONFEATURE Load Switch for Portable Devices High density cell design for low RDS(ON) DC/DC Converter Voltage controlled small sig

2N7002W Mosfet(N-Channel)SOT-3231. GATE 2. SOURCE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Marking: K72 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 60 V

2N7002WN-Channel MOSFET3 DRAIN3Features:112*Low On-Resistance : 7.5 GATE*Low Input Capacitance: 22PFSOT-323(SC-70)*Low Output Capacitance : 11PF2*Low Threshold Voltage :1 .5V(TYE)SOURCE*Fast Switching Speed : 7nsMaximum Ratings (TA=25 C Unless Otherwise Specified)Rating Symbol Value UnitDrain-Source Voltage VDS 60 VGate-Source Voltage VGS 20 VConti

FM120-M WILLASTHRU2N7002WT1115 mA, 60 VSmall Signal MOSFETFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toNCh

LESHAN RADIO COMPANY, LTD.Small Signal MOSFET115 mA, 60 VL2N7002WT1GNChannel SOT3233 We declare that the material of product compliance with RoHS requirements.1 ESD Protected:1000V2MAXIMUM RATINGSSOT 323 (SC-70)Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 VdcDrain Current ID 115 mAdcSim

SMD Type MOSFETN-Channel MOSFET2N7002W Features VDS (V) = 60V ID = 0.34 A (VGS = 10V) RDS(ON) 1.6 (VGS = 10V) RDS(ON) 2.5 (VGS = 4.5V) ESD Protected1 Gate2 Source3 Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Source Voltage VGS 20 Ta=25 310 Continuous Drain C

2N7002W60V N-Channel Enhancement Mode MOSFETFEATURES RDS(ON), VGS@10V,IDS@500mA=5 RDS(ON), VGS@4.5V,IDS@75mA=7.5 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. In compliance with EU RoH

AiT Semiconductor Inc. AM2N7002W www.ait-ic.com N-CHANNEL MOSFET SMALL SIGNAL MOSFET 115mA, 60 VOLTS DESCRIPTION FEATURES Available in SOT-323 package. ESD Protected: 1000V Available in SOT-323 package ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number SOT-323 AM2N702WC3R C3 (SC70-3) AM2N702WC3VR V: Halogen free Package Note R: Tape & Reel SPQ: 3,0

CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is High Density Cell Design for Low RDS(ON) produced using high cell density, DMOS technology. These Voltage Controlled Small Signal Switch products have been designed to minimize on-state resistance Rugged and Reliable while provide rugged, reliable, and fast swi