2N7272 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N7272
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VRds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Paquete / Cubierta: TO-205AF
Búsqueda de reemplazo de MOSFET 2N7272
2N7272 Datasheet (PDF)
2n7272 2n7275 2n7278 2n7281.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall MIL-PRF-19500/604Bbe completed by 30 November 2004. 30 July 2004 SUPERSEDINGMIL-PRF-19500/604A21 June 1999PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES
jansr2n7272.pdf
JANSR2N7272Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 8A, 100V, rDS(ON) = 0.180 The Intersil Corporation,has designed a series of SECONDGENERATION hardened power MOSFETs of both N-Chan- Total Dosenel and P-Channel enhancement types with ratings from100V to 500V, 1A to 60A, and on resistance as low as- Meets Pre
jansr2n7275.pdf
JANSR2N7275Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 5A, 200V, rDS(ON) = 0.500 The Intersil Corporation has designed a series of SECONDGENERATION hardened power MOSFETs of both N-Chan- Total Dosenel and P-Channel enhancement types with ratings from100V to 500V, 1A to 60A, and on resistance as low as- Meets Pre
jansr2n7278.pdf
JANSR2N7278Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 4A, 250V, rDS(ON) = 0.700 The Intersil Corporation has designed a series of SECONDGENERATION hardened power MOSFETs of both N-Chan- Total Dosenel and P-Channel enhancement types with ratings from100V to 500V, 1A to 60A, and on resistance as low as- Meets Pre
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD