2N7394 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N7394  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm

Encapsulados: TO-254AA

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2N7394 datasheet

 ..1. Size:166K  microsemi
 2n7394 2n7394u.pdf pdf_icon

2N7394

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Qualified per MIL-PRF-19500/603 DEVICES LEVELS MSR (100K RAD(Si)) 2N7394 2N7394U MSF (300K RAD(Si))

 9.1. Size:53K  intersil
 jansr2n7398.pdf pdf_icon

2N7394

JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 2A, 500V, rDS(ON) = 2.50 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Single Even

 9.2. Size:52K  intersil
 jansr2n7396.pdf pdf_icon

2N7394

JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 5A, 200V, rDS(ON) = 0.460 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si) t

 9.3. Size:53K  intersil
 jansr2n7395.pdf pdf_icon

2N7394

JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 8A, 100V, rDS(ON) = 0.230 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Single Ev

MOSTRAR MÁS

Otros transistores... 2N7293, 2N7295, 2N7297, 2N7334, 2N7335, 2N7335E3, 2N7380, 2N7381, IRF740, 2N7394U, 2N7405, BSC079N03S, FHF5N60, MDD1654, NDP05N50Z, NDS356P, P6503NJ