P6503NJ Todos los transistores

 ..1. Size:481K  niko-sem
 p6503nj.pdf

P6503NJ NIKO-SEM N- & P-Channel Enhancement Mode TSOPJW-8 Field Effect Transistor PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G GATE 65m N-Channel 30 4A D DRAIN S SOURCE 150m -3A P-Channel -30 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS Drain-Source Voltage VDS 30 -30 V Gate-Source Vo

 9.1. Size:754K  unikc
 p6503fma.pdf

P6503FMA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 55m @VGS = -10V -30V -3.1A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 12 V TA = 25 C -3.1 ID Continuous Drain Current TA = 70 A C -2.4 IDM -12 Pulsed Drain Current1 TA = 25 C 0.96

 9.2. Size:483K  unikc
 p6503fm6.pdf

P6503FM6 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 65m @VGS = -4.5V -30V -3.6A SOT-23-6 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 12 TA = 25 C -3.6 ID Continuous Drain Current TA = 70 C -3 A IDM -19 Pulsed Drai

 9.3. Size:367K  unikc
 p6503fm.pdf

P6503FM P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 65m @VGS = -4.5V -3.6A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 12 TA = 25 C -3.6 ID Continuous Drain Current TA = 70 C -3 A IDM -19 Pulsed Drain C