2N5654 Todos los transistores

 

2N5654 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N5654
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 0.625 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Corriente continua de drenaje |Id|: 0.015 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Resistencia entre drenaje y fuente RDS(on): 100 Ohm
   Paquete / Cubierta: TO-92

 Búsqueda de reemplazo de MOSFET 2N5654

 

2N5654 Datasheet (PDF)

 ..1. Size:44K  njs
2n5653 2n5654.pdf

2N5654

 9.1. Size:176K  motorola
2n5655-57 2n5655 2n5656 2n5657.pdf

2N5654
2N5654

Order this documentMOTOROLAby 2N5655/DSEMICONDUCTOR TECHNICAL DATA2N56552N5656Plastic NPN Silicon2N5657High-Voltage Power Transistor. . . designed for use in lineoperated equipment such as audio output amplifiers;lowcurrent, highvoltage converters; and AC line relays. 0.5 AMPEREPOWER TRANSISTORS Excellent DC Current Gain hFE = 30250 @ IC = 100 mAdcNP

 9.2. Size:497K  st
2n5657.pdf

2N5654
2N5654

2N5657SILICON NPN TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPNtransistor in Jedec SOT-32 plastic package. It isintended for use output amplifiers, low current,high voltage converters and AC line relays.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Un

 9.3. Size:119K  onsemi
2n5655g.pdf

2N5654
2N5654

2N5655G, 2N5657GPlastic NPN SiliconHigh-Voltage PowerTransistorsThese devices are designed for use in line-operated equipment suchas audio output amplifiers; low-current, high-voltage converters; andhttp://onsemi.comAC line relays.0.5 AMPEREFeaturesPOWER TRANSISTORS Excellent DC Current GainNPN SILICON High Current-Gain - Bandwidth Product250-350 VOLTS, 20 WATT

 9.4. Size:80K  onsemi
2n5655 2n5657.pdf

2N5654
2N5654

2N5655, 2N5657Plastic NPN SiliconHigh-Voltage PowerTransistorThese devices are designed for use in line-operated equipment suchas audio output amplifiers; low-current, high-voltage converters; andhttp://onsemi.comAC line relays.0.5 AMPEREFeaturesPOWER TRANSISTORS Excellent DC Current Gain -NPN SILICONhFE = 30-250 @ IC = 100 mAdc250-350 VOLTS, 20 WATTS Current

 9.5. Size:80K  onsemi
2n5657g.pdf

2N5654
2N5654

2N5655, 2N5657Plastic NPN SiliconHigh-Voltage PowerTransistorThese devices are designed for use in line-operated equipment suchas audio output amplifiers; low-current, high-voltage converters; andhttp://onsemi.comAC line relays.0.5 AMPEREFeaturesPOWER TRANSISTORS Excellent DC Current Gain -NPN SILICONhFE = 30-250 @ IC = 100 mAdc250-350 VOLTS, 20 WATTS Current

 9.6. Size:175K  onsemi
2n5655g 2n5657g.pdf

2N5654
2N5654

2N5655G, 2N5657GPlastic NPN SiliconHigh-Voltage PowerTransistorsThese devices are designed for use in line-operated equipment suchas audio output amplifiers; low-current, high-voltage converters; andhttp://onsemi.comAC line relays.0.5 AMPEREFeaturesPOWER TRANSISTORS Excellent DC Current GainNPN SILICON High Current-Gain - Bandwidth Product250-350 VOLTS, 20 WATT

 9.7. Size:121K  jmnic
2n5655 2n5656 2n5657.pdf

2N5654
2N5654

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5655 2N5656 2N5657 DESCRIPTION With TO-126 package High breakdown voltage APPLICATIONS For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Bas

 9.8. Size:94K  ssdi
2n5659.pdf

2N5654
2N5654

 9.9. Size:53K  inchange semiconductor
2n5657.pdf

2N5654
2N5654

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5657 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) DC Current Gain- : hFE= 30-250@IC= 0.1A Low Saturation Voltage APPLICATIONS Designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and AC

 9.10. Size:117K  inchange semiconductor
2n5655 2n5656 2n5657.pdf

2N5654
2N5654

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5655 2N5656 2N5657 DESCRIPTION With TO-126 package High breakdown voltage APPLICATIONS For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting bas

 9.11. Size:190K  inchange semiconductor
2n5656.pdf

2N5654
2N5654

isc Silicon NPN Power Transistors 2N5656DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)Low Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in line-operated equipment such as audiooutput amplifiers; low-current, high-voltage converters; and

 9.12. Size:195K  inchange semiconductor
2n5655.pdf

2N5654
2N5654

isc Silicon NPN Power Transistors 2N5655DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)DC Current Gain-: h = 30-250@I = 0.1AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated equipment such as audiooutput amplifiers; low-current, high-

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