2N60AF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RoHS 2N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(2A, 600Volts)DESCRIPTIOND The Nell 2N60 is a three-terminal silicon Ddevice with current conduction capabilityof 2A, fast switching speed, low on-stateresistance, breakdown voltage rating of 600V,and max. threshold voltage of 4 volts.G They are designed for use in applications such

RoHS I2N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET12A, 600VoltsDESCRIPTION The Nell 12N60 is a three-terminal silicon device with current conduction capability ofD12A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V,and max. threshold voltage of 4 volts. They are designed for use in applications suchas s

RCM12N60AF www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE2 1

HGTP12N60A4, HGTG12N60A4,HGT1S12N60A4SData Sheet May 1999 File Number 4656.2600V, SMPS Series N-Channel IGBT FeaturesThe HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12AHGT1S12N60A4S are MOS gated high voltage switching 200kHz Operation at 390V, 9Adevices combining the best features of MOSFETs and 600V Switching SOA Capabilitybipolar transistors. These de

HGTG12N60A4D, HGTP12N60A4D,HGT1S12N60A4DSData Sheet December 2001600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12AThe HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9AHGT1S12N60A4DS are MOS gated high voltage switching

HGTP12N60A4, HGTG12N60A4,HGT1S12N60A4S9AData Sheet August 2003600V, SMPS Series N-Channel IGBTs FeaturesThe HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12AHGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9Adevices combining the best features of MOSFETs and 600V Switching SOA Capabilitybipolar transistors. These devices ha

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charac

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 5.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V2 Lower RDS(ON) : 3.892 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 5.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

SiHA22N60AELwww.vishay.comVishay SiliconixEL Series Power MOSFETFEATURESDThin-Lead TO-220 FULLPAK Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction lossesG Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance Splease see www.vishay.com/doc?999

SiHA22N60AEwww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESDThin-Lead TO-220 FULLPAK Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction lossesG Ultra low gate charge (Qg)Available Avalanche energy rated (UIS) Material categorization: for definitions of compliance Splease see www.vishay.co

IGBT with Diode IXSN 52N60AU1 VCES = 600 VIC25 = 80 ACombi Pack VCE(sat) = 3 V3Short Circuit SOA Capability241Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B1VCES TJ = 25C to 150C 600 V2VCGR TJ = 25C to 150C; RGE = 1 MW 600 AVGES Continuous 20 VVGEM Transient 30 V4IC25 TC = 25C80 A3IC90 TC = 90C40 A1 = Emitter , 3 = CollectorIC

IXGH72N60A3 VCES = 600VGenX3TM 600V IGBTIXGT72N60A3IC110 = 72AUltra Low Vsat PT IGBT forVCE(sat) 1.35Vup to 5kHz switchingtfi(typ) = 250nsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGC C (TAB)EIC25 TC = 25C (lim

IXGH 32N60AU1IXGH 32N60AU1SVCES = 600 VIC25 = 60 AHiPerFASTTM IGBTwith Diode VCE(sat) = 2.9VCombi Packtfi = 125 nsTO-247 SMD(32N60AU1S)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGC (TAB)EVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 ADVGEM Transient 30 VIC25 TC = 25C60 AIC90 TC = 90C32 AC (TAB)

VCES = 600VGenX3TM 600V IGBTIXGR72N60A3IC110 = 52AVCE(sat) 1.35VUltra-low Vsat PT IGBTs forup to 5kHz switchingtfi(typ) = 250nsSymbol Test Conditions Maximum RatingsISOPLUS247TM (IXGR)VCES TJ = 25C to 150C 600 VE153432VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VIC110 TC = 110C 52 AGICM TC

IXGH 32N60AIXGH 32N60ASVCES = 600 VIC25 = 60 AHiPerFASTTM IGBTVCE(sat) = 2.9 Vtfi = 125 nsTO-247 SMD(32N60AS)Symbol Test Conditions Maximum RatingsC (TAB)VCES TJ = 25C to 150C 600 V GEVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 ADVGEM Transient 30 VIC25 TC = 25C60 AIC90 TC = 90C32 AC (TAB)GICM TC = 25C, 1 ms 120

Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGR72N60A3H1w/Diode IC110 = 52AVCE(sat) 1.35V(Electrically Isolated Back Surface)tfi(typ) = 250nsUltra-Low Vsat PT IGBT for up to5kHz SwitchingSymbol Test Conditions Maximum RatingsISOPLUS 247TMVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous

IXGH72N60A3 VCES = 600VGenX3TM 600V IGBTIXGT72N60A3IC110 = 72AUltra Low Vsat PT IGBT forVCE(sat) 1.35Vup to 5kHz switchingtfi(typ) = 250nsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGC C (TAB)EIC25 TC = 25C (lim

Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGK72N60A3H1w/Diode IC110 = 72AIXGX72N60A3H1VCE(sat) 1.35Vtfi(typ) = 250nsUltra-Low Vsat PT IGBTs forup to 5kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 V (TAB)GVGES Continuous 20 VCE

Preliminary Technical InformationVCES = 600VIXGN72N60A3GenX3TM 600V IGBTIC110 = 68AVCE(sat) 1.35VUltra Low Vsat PT IGBT forup to 5kHz switchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 600 VE VCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VVGEM Transient 30 VIC25 TC

Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGK72N60A3H1w/Diode IC110 = 72AIXGX72N60A3H1VCE(sat) 1.35Vtfi(typ) = 250nsUltra-Low Vsat PT IGBTs forup to 5kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 V (TAB)GVGES Continuous 20 VCE

Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGK72N60A3H1w/Diode IC110 = 72AIXGX72N60A3H1VCE(sat) 1.35Vtfi(typ) = 250nsUltra-Low Vsat PT IGBTs forup to 5kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 V (TAB)GVGES Continuous 20 VCE

IXSA 12N60AU1 VCES = 600 VLow VCE(sat) IGBTIC25 = 24 Awith DiodeVCE(sat) = 2.5 VShort Circuit SOA CapabilityPreliminary data sheetSymbol Test Conditions Maximum RatingsTO-263AAVCES TJ = 25 C to 150 C 600 VVCGR TJ = 25 C to 150 C; RGE = 1 M 600 VGVGES Continuous 20 VETABVGEM Transient 30 VG = Gate, C = Collector,IC25 TC = 25 C24 AE = Emitter

IXGH 32N60AIXGH 32N60ASVCES = 600 VIC25 = 60 AHiPerFASTTM IGBTVCE(sat) = 2.9 Vtfi = 125 nsTO-247 SMD(32N60AS)Symbol Test Conditions Maximum RatingsC (TAB)VCES TJ = 25C to 150C 600 V GEVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 ADVGEM Transient 30 VIC25 TC = 25C60 AIC90 TC = 90C32 AC (TAB)GICM TC = 25C, 1 ms 120

SMPS Series N-ChannelIGBT with Anti-ParallelHyperfast Diode600 VHGTG12N60A4D,www.onsemi.comHGTP12N60A4D,HGT1S12N60A4DSCThe HGTG12N60A4D, HGTP12N60A4D andHGT1S12N60A4DS are MOS gated high voltage switching devicesGcombining the best features of MOSFETs and bipolar transistors.These devices have the high input impedance of a MOSFET and theElow on-state conduction los

AOD2N60A/AOI2N60A/AOU2N60A600V,2A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700V Advanced High Voltage MOSFET technology Low RDS(ON) ID (at VGS=10V) 2A Low Ciss and Crss RDS(ON) (at VGS=10V)

AOD2N60A/AOI2N60A/AOU2N60A600V,2A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700V Advanced High Voltage MOSFET technology Low RDS(ON) ID (at VGS=10V) 2A Low Ciss and Crss RDS(ON) (at VGS=10V)

AOD2N60A/AOI2N60A/AOU2N60A600V,2A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700V Advanced High Voltage MOSFET technology Low RDS(ON) ID (at VGS=10V) 2A Low Ciss and Crss RDS(ON) (at VGS=10V)

RCM12N60A www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE2 3

N N-CHANNEL MOSFET FHF2N60A/FHP2N60A/FHU2N60A/FHD2N60A MAIN CHARACTERISTICS FEATURES ID 2A Low gate charge VDSS 600V Crss ( 6pF) Low Crss (typical 6pF ) Rdson-typ @Vgs=10V 3.5 Fast switching Qg-typ 8.0nC 100% 100% avalanche tested dv/

N N-CHANNEL MOSFET FHP12N60A/ FHF12N60A MAIN CHARACTERISTICS FEATURES Low gate charge ID 12A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 600V Fast switching Rdson-typ 0.6 @Vgs=10V 100% 100% avalanche tested Qg-typ 52nC dv/dt Im

SAMWIN SW2N60A1 SW2N60A1N-channel IPAK/TO-220F MOSFET TO-251 TO-220F BVDSS : 600V Features ID : 2.0A High ruggedness RDS(ON) : 5.0ohm RDS(ON) (Max 5.0 )@VGS=10V Gate Charge (Typical 10nC) Improved dv/dt Capability 1 1 2 100% Avalanche Tested 2 2 3 3 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced w

TMP12N60A(G)/TMPF12N60A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 12A

TMP2N60AZ(G)/TMPF2N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A

TMD2N60AZ(G)/TMU2N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A

Silicon N-Channel Power MOSFET R CS12N60 A8HD VDSS 600 V XGeneral Description ID 12 A CS12N60 A8HD, the silicon N-channel Enhanced PD (TC=25) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Silicon N-Channel Power MOSFET R CS2N60 A7H General Description VDSS 600 V CS2N60 A7H, the silicon N-channel Enhanced ID 2 A PD (TC=25) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS2N60 A3H General Description VDSS 600 V CS2N60 A3H, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS2N60 A4T General Description VDSS 600 V CS2N60 A4T, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS2N60 A4H General Description VDSS 600 V CS2N60 A4H, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS12N60 A8H VDSS 600 V General Description ID 12 A CS12N60 A8H, the silicon N-channel Enhanced PD (TC=25) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

FIR2N60ALGAdvanced N-Ch Power MOSFETPIN Connection TO-252(D-PAK)General DescriptionFIR2N60ALG is an N-channel enhancement mode powerMOS field effect transistor which is produced using Silan Dproprietary F-CellTM structure VDMOS technology. The improved Gplanar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, prov

isc N-Channel MOSFET Transistor AOU2N60AFEATURESDrain Current I = 2A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =4.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc N-Channel MOSFET Transistor AOI2N60AFEATURESDrain Current I = 2A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =4.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc N-Channel MOSFET Transistor AOD2N60AFEATURESDrain Current I = 2A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =4.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose