2N6660C4A Todos los transistores

 ..1. Size:236K  semelab
 2n6660c4a.pdf

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660C4 VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0 Fast Switching Low Threshold Voltage (Logic Level) Low CISS Integral Source-Drain Body Diode Hermetic Surface Mounted Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VDS Drain Source V

 7.1. Size:129K  semelab
 2n6660csm4.pdf

2N6660CSM4 MECHANICAL DATA N CHANNEL Dimensions in mm (inches) 1.40 0.15 5.59 0.13 (0.055 0.006) ENHANCEMENT MODE (0.22 0.005) 0.25 0.03 (0.01 0.001) MOSFET 0.23 rad. (0.009) V 60V DSS 3 2 I 1.0A D 0.23 4 1 min. (0.009) R 3.0 DS(on) 1.02 0.20 2.03 0.20 FEATURES (0.04 0.008) (0.08 0.008) Faster switching Low Ciss

 8.1. Size:125K  vishay
 2n6660-2.pdf

2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Military Qualified VDS (V) 60 Low On-Resistence 1.3 RDS(on) ( ) at VGS = 10 V 3 Low Threshold 1.7 V Configuration Single Low Input Capacitance 35 pF Fast Switching Speed 8 ns Low Input and Output Leakage TO-205AD (TO-3

 8.2. Size:527K  supertex
 2n6660.pdf

Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6660 is an enhancement-mode (normally- Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure and Low power drive requirement Supertex s well-proven silicon-gate manufacturing process. Ease of paralleling This combination produ

 8.3. Size:21K  supertex
 2n6660 2n6661.pdf

2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS /RDS(ON) ID(ON) BVDGS (max) (min) TO-39 60V 3.0 1.5A 2N6660 90V 4.0 1.5A 2N6661 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process These enhancement-mode (normally-off) transistors utilize a Flows and Ordering Informa

 8.4. Size:42K  no
 2n6656-59 2n6660-61.pdf