2N6792U Todos los transistores

 

2N6792U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N6792U

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 14 W

Tensión drenaje-fuente |Vds|: 400 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 1.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 22 nC

Tiempo de elevación (tr): 35 nS

Conductancia de drenaje-sustrato (Cd): 100 pF

Resistencia drenaje-fuente RDS(on): 1.8 Ohm

Empaquetado / Estuche: LCC18

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2N6792U Datasheet (PDF)

0.1. 2n6792u.pdf Size:373K _international_rectifier

2N6792U
2N6792U

PD - 93985AIRFE320JANTX2N6792UREPETITIVE AVALANCHE AND dv/dt RATEDJANTXV2N6792UHEXFETTRANSISTORSREF:MIL-PRF-19500/555SURFACE MOUNT (LCC-18)400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFE320 400V 1.8 1.8ALCC-18The leadless chip carrier (LCC) package represents thelogical next step in the continual evolution of surfaceFeatures:mount technology.

8.1. 2n6792 irff320.pdf Size:131K _international_rectifier

2N6792U
2N6792U

PD -90428CIRFF320REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6792HEXFETTRANSISTORS JANTXV2N6792THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF320 400V 1.8 2.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

 9.1. 2n6790.pdf Size:86K _fairchild_semi

2N6792U
2N6792U

2N6790Data Sheet December 20013.5A, 200V, 0.800 Ohm, N-Channel Power FeaturesMOSFET 3.5A, 200VThe 2N6790 is an N-Channel enhancement mode silicon rDS(ON) = 0.800gate power MOS field effect transistor designed for SOA is Power Dissipation Limitedapplications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high

9.2. 2n6790 irff220.pdf Size:133K _international_rectifier

2N6792U
2N6792U

PD - 90427CIRFF220REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6790HEXFETTRANSISTORS JANTXV2N6790THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF220 200V 0.80 3.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processin

 9.3. 2n6798 irff230.pdf Size:131K _international_rectifier

2N6792U
2N6792U

PD -90431CIRFF230REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798HEXFETTRANSISTORS JANTXV2N6798THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF230 200V 0.40 5.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

9.4. irff1xx irff2xx irff3xx irff4xx 2n678x 2n679x 2n680x.pdf Size:99K _international_rectifier

2N6792U

 9.5. 2n6794 irff420.pdf Size:128K _international_rectifier

2N6792U
2N6792U

PD - 90429CIRFF420REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6794HEXFETTRANSISTORS JANTXV2N6794THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF420 500V 3.0 1.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

9.6. 2n6796u irfe130.pdf Size:145K _international_rectifier

2N6792U
2N6792U

Provisional Data Sheet No. PD - 9.1666AIRFE130REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796UHEXFET TRANSISTOR JANTXV2N6796U[REF:MIL-PRF-19500/557]N-CHANNEL 100Volt, 0.18 Product Summary, HEXFETThe leadless chip carrier (LCC) package representsPart Number BVDSS RDS(on) IDthe logical next step in the continual evolution ofIRFE130 100V 0.18 8.0A

9.7. 2n6790u.pdf Size:191K _international_rectifier

2N6792U
2N6792U

PD - 93984AREPETITIVE AVALANCHE AND dv/dt RATED IRFE220HEXFETTRANSISTORS JANTX2N6790USURFACE MOUNT (LCC-18)REF:MIL-PRF-19500/555 200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFE220 100V 0.80 2.8ALCC-18The leadless chip carrier (LCC) package represents thelogical next step in the continual evolution of surfaceFeatures:mount technology. Desinged t

9.8. 2n6794u.pdf Size:230K _international_rectifier

2N6792U
2N6792U

PD - 93986AIRFE420JANTX2N6794UREPETITIVE AVALANCHE AND dv/dt RATEDJANTXV2N6794UHEXFETTRANSISTORSREF:MIL-PRF-19500/555SURFACE MOUNT (LCC-18)500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFE420 500V 3.0 1.4ALCC-18The leadless chip carrier (LCC) package represents thelogical next step in the continual evolution of surfaceFeatures:mount technology.

9.9. 2n6796 2n6798 2n6800 2n6802.pdf Size:66K _omnirel

2N6792U
2N6792U

2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N68002N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE,QUALIFIED TO MIL-PRF-19500/557100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power TransistorFEATURESLow RDS(on)Ease of ParallelingQualified to MIL-PRF-19500/557DESCRIPTIO

9.10. 2n6796lcc4.pdf Size:15K _semelab

2N6792U
2N6792U

2N6796LCC4MECHANICAL DATADimensions in mm (inches)N-CHANNEL9.14 (0.360)1.27 (0.050) 8.64 (0.340) POWER MOSFET1.07 (0.040) 2.16 (0.085)12 13 14 15 161.39 (0.055)1.02 (0.040)11 1710 187.62 (0.300) VDSS = 100V7.12 (0.280)9 10.76 (0.030)8 20.51 (0.020) ID = 7.4A0.33 (0.013)Rad. RDS(ON) = 0.180.08 (0.003)7 6 5 4 30.43 (0.017)Rad.1.39 (0.05

9.11. 2n6794.pdf Size:23K _semelab

2N6792U
2N6792U

2N6794SEMELABMECHANICAL DATADimensions in mm (inches)NCHANNEL POWER MOSFET BVDSS 500V ID(cont) 1.5 RDS(on) 3.0 FEATURES ! AVALANCHE ENERGY RATED

9.12. 2n6796.pdf Size:18K _semelab

2N6792U
2N6792U

2N6796MECHANICAL DATADimensions in mm (inches)TMOS FET TRANSISTOR N CHANNEL FEATURES VDSS = 100V ID = 8A ! RDSON = 0.18

9.13. 2n6798.pdf Size:21K _semelab

2N6792U
2N6792U

2N6798MECHANICAL DATADimensions in mm (inches)N-CHANNEL ENHANCEMENT MODE TRANSISTOR FEATURES V(BR)DSS = 200V ID = 5.5A ! RDSON = 0.40

9.14. 2n6798u.pdf Size:175K _microsemi

2N6792U
2N6792U

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS JAN 2N6798 2N6798UJANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source Voltag

9.15. 2n6796u.pdf Size:177K _microsemi

2N6792U
2N6792U

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6796 2N6796U JANJANTXJANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C un

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