1N60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RoHS 1N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(1.2A, 600Volts)DESCRIPTION The Nell 1N60 is a three-terminal silicon DDdevice with current conduction capabilityof 1.2A, fast switching speed, low on-stateresistance, breakdown voltage rating of 600V,and max. threshold voltage of 4 volts.G They are designed for use in applications suc

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD1N60E/DDesigner's Data SheetMTD1N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 1.0 AMPERE600 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 8.0 OHMscheme to provide enhanced vol

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1N60E/DDesigner's Data SheetMTP1N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination1.0 AMPERESscheme to provide enhanced voltageblocking capability without600 VOLTSdegra

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW21N60ED/DPreliminary Data SheetMGW21N60EDInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) is copackagedIGBT IN TO247with a soft recovery ultrafast rectifier and uses an advanced21 A @ 90Ctermination scheme to provide an enhanced

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1N60E/DDesigner's Data SheetMTP1N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination1.0 AMPERESscheme to provide enhanced voltageblocking capability without600 VOLTSdegra

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW21N60ED/DDesigner's Data SheetMGW21N60EDInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) is copackagedIGBT IN TO247with a soft recovery ultrafast rectifier and uses an advanced21 A @ 90Ctermination scheme to provide an enhanc

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP21N60E/DDesigner's Data SheetMGP21N60EInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high21 A @ 90Cvoltageblocking capability. Its new 600 V I

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP11N60E/DDesigner's Data SheetMGP11N60EInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high11 A @ 90Cvoltageblocking capability. Its new 600 V I

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP21N60E/DDesigner's Data SheetMGP21N60EInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high21 A @ 90Cvoltageblocking capability. Its new 600 V I

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP11N60ED/DDesigner's Data SheetMGP11N60EDInsulated Gate Bipolar Transistorwith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO22011 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged15 A @ 25Cwith a soft recovery ultrafast rectifier and uses an a

Philips Semiconductors Objective Specification PowerMOS transistor PHP1N60E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 600 Vavalanche energy capability, stable ID Drain current (DC) 1.9 Ablocking voltage, fast switching and Ptot Total power d

Philips Semiconductors Objective Specification PowerMOS transistor PHX1N60E Isolated version of PHP1N60EGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a fullpack, plastic envelope featuring high VDS Drain-source voltage 600 Vavalanche energy capability, stable ID Drain current (DC) 1.3 Ablocking volt

December 2013FCH041N60EN-Channel SuperFET II Easy-Drive MOSFET600 V, 77 A, 41 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 36 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 285 nC

SiHA21N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESDThin-Lead TO-220 FULLPAK Fast body diode MOSFET using E series technology Reduced trr, Qrr, and IRRM Low figure-of-merit (FOM): Ron x QgG Low input capacitance (Ciss)Available Increased robustness due to low Qrr Ultra low gate charge (Qg) Avalanche en

SiHH21N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Fully lead (Pb)-free deviceVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x QgRDS(on) typ. () at 25 C VGS = 10 V 0.153 Low input capacitance (Ciss)Qg max. (nC) 83 Reduced switching and conduction lossesQgs (nC) 11Qgd (nC) 20 Ultra low gate charge (Qg)Conf

SiHH11N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Fully lead (Pb)-free deviceVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x QgRDS(on) typ. () at 25 C VGS = 10 V 0.295 Low input capacitance (Ciss)Qg max. (nC) 62 Reduced switching and conduction lossesQgs (nC) 7Qgd (nC) 13 Ultra low gate charge (Qg)Confi

FMV11N60E FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-E3 seriesFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00

FMI11N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

FMC11N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

FMP11N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

SAMWIN SW1N60E Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA 600 V BVDSS Breakdown voltage temperature ID=250uA, referenced to 25oC 0.76 V/oC / TJ coefficient VDS=600V, VGS=0V 1 uA IDSS Drain to source leakage current

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FMV11N60EFEATURESWith TO-220F packagingMaintains both low power loss andlow noiseVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC-DC convertersUninterruptible po