BLM3407A Todos los transistores

 ..1. Size:215K  belling
 blm3407a.pdf

 7.1. Size:215K  belling
 blm3407.pdf

Pb Free Product BLM3407 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The BLM3407 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram V = -30V,I = -4.1A DS D R

 8.1. Size:78K  belling
 blm3400.pdf

Pb Free Product BLM3400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM3400 uses advanced trench technology to provide D excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S GENERAL FEATURES V = 30V,I = 5.8A Schematic diagram DS

 8.2. Size:190K  belling
 blm3401a.pdf

 8.3. Size:190K  belling
 blm3401.pdf

P-Channel Enhancement BLM3401 Mode MOSFET BLM3401 BLM3401 BLM3401 FEATURES APPLICATIONS VDS VGS RDSon TYP ID Load Switch 51mR@-10V 4A Portable Devices 30V 12V 60mR@-4V5 DCDC conversion 98mR@-2V5 Pin Configuration DESCRIPTION This device is particularly suited for low voltage application such as portable equipment, power management and other