BLM3415 Todos los transistores

 ..1. Size:527K  belling
 blm3415.pdf

Pb Free Product BLM3415 P-Channel Enhancement Mode Power MOSFET Description The BLM3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = -20V,ID =-4A Schematic diagram RDS(ON)

 9.1. Size:78K  belling
 blm3400.pdf

Pb Free Product BLM3400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM3400 uses advanced trench technology to provide D excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S GENERAL FEATURES V = 30V,I = 5.8A Schematic diagram DS

 9.2. Size:190K  belling
 blm3401a.pdf

 9.3. Size:190K  belling
 blm3401.pdf

P-Channel Enhancement BLM3401 Mode MOSFET BLM3401 BLM3401 BLM3401 FEATURES APPLICATIONS VDS VGS RDSon TYP ID Load Switch 51mR@-10V 4A Portable Devices 30V 12V 60mR@-4V5 DCDC conversion 98mR@-2V5 Pin Configuration DESCRIPTION This device is particularly suited for low voltage application such as portable equipment, power management and other

 9.4. Size:215K  belling
 blm3407a.pdf

 9.5. Size:215K  belling
 blm3407.pdf

Pb Free Product BLM3407 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The BLM3407 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram V = -30V,I = -4.1A DS D R