60N06-18 Todos los transistores

 ..1. Size:230K  inchange semiconductor
 60n06-18.pdf

 0.1. Size:100K  vishay
 sup60n06-18 sub60n06-18.pdf

SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G D S G D S Top View Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V V Gate-Sourc

 7.1. Size:54K  st
 stp60n05-14 stp60n06-14.pdf

STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP60N05-14 50 V

 7.2. Size:354K  st
 stp60n05-16 stp60n06-16.pdf

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 7.3. Size:87K  st
 stb60n06-14.pdf

STB60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STB60N06-14 60 V

 7.4. Size:164K  vishay
 sup60n06-12p.pdf

 7.5. Size:698K  vishay
 sqm60n06-15.pdf

SQM60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.015 TrenchFET Power MOSFET ID (A) 56 Package with Low Thermal Resistance AEC-Q101 Qualifiedd Configuration Single 100 % Rg and UIS Tested D Charac

 7.6. Size:126K  vishay
 sqp60n06-15.pdf

SQP60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.015 AEC-Q101 Qualifiedd ID (A) 56 100 % Rg and UIS Tested Configuration Single Material categorization D TO-220AB For definitions of complianc

 7.7. Size:867K  cn vbsemi
 stb60n06-14.pdf

STB60N06-14 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 60 60 0.013 at VGS = 4.5 V 50 D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VGS Gate-Sou

 7.8. Size:228K  inchange semiconductor
 stp60n06-14.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP60N06-14 FEATURES With low gate drive requirements Easy to drive High current capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Solenold and relay dirvers DC-DC converters Automotive environment ABSOLUTE MAXIMUM RATINGS(T =25

 7.9. Size:226K  inchange semiconductor
 60n06-14.pdf

isc N-Channel MOSFET Transistor 60N06-14 DESCRIPTION High current capability Avalanche rugged technology Low gate charge Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Regulator High current,high speed switching Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL ARAMETER V