75NF75 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc N-Channel MOSFET Transistor 75NF75DESCRIPTIONDrain Current I = 75A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: RDS(on) = 0.013(Max)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenoid and relay driversDC motor controlDC-DC converters DCAutomotive envir

STB75NF75STP75NF75 - STP75NF75FPN-channel 75V - 0.0095 - 80A - TO-220 - TO-220FP - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB75NF75 75V

STB75NF75LN-channel 75V - 0.009 - 75A - D2PAKSTripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTB75NF75L 75V

STB75NF75STP75NF75 STP75NF75FPN-CHANNEL 75V - 0.0095 - 80A TO-220/TO-220FP/DPAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB75NF75 75 V

STP75NF75LSTB75NF75L STB75NF75L-1N-CHANNEL 75V - 0.009 - 75A D2PAK/I2PAK/TO-220STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB75NF75L/-1 75 V

STB75NF75STP75NF75 - STP75NF75FPN-channel 75V - 0.0095 - 80A - TO-220 - TO-220FP - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB75NF75 75V

STB75NF75LN-channel 75V - 0.009 - 75A - D2PAKSTripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTB75NF75L 75V

80A80V75NF75N-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =7m@V =10VDS(ON) GS Lead free and green device available LowRds-onto minimize conductive loss High avalanchecurrent2. Applications Power supply DC-DC converters3. PinconfigurationPin Function1 Gate2 Drain3 Source4 Drain1 of 7 Rev1.1JAN201480A80V

VBZM75NF75www.VBsemi.comN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET80VDS V 100 % Rg and UIS TestedRDS(on) VGS = 10 V 7m9RDS(on) VGS = 4.5 V mAPPLICATIONS100ID A Primary Side SwitchingConfiguration Single Synchronous Rectification DC/AC InvertersTO-220AB D LED BacklightingGTop ViewSN-C

isc N-Channel MOSFET Transistor P75NF75FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STB75NF75T4FEATURESWith To-263(D2PAK) packageExcellent switching performance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75 V

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP75NF75FPFEATURESExcellent switching performanceWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Dra

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP75NF75FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 0.011(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONSuitable as primary switch in advanced hi