BUK436-100B Todos los transistores

 

BUK436-100B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK436-100B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 31 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm

Encapsulados: TO-3PN

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BUK436-100B datasheet

 4.1. Size:235K  inchange semiconductor
buk436-100ab.pdf pdf_icon

BUK436-100B

INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK436-100A/B DESCRIPTION Drain Source Voltage- V =100V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance appl

 7.1. Size:236K  inchange semiconductor
buk436-800ab.pdf pdf_icon

BUK436-100B

INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK436-800A/B DESCRIPTION Drain Source Voltage- V =800V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance appl

 7.2. Size:235K  inchange semiconductor
buk436-60ab.pdf pdf_icon

BUK436-100B

INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK436-60A/B DESCRIPTION Drain Source Voltage- V =60V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance applic

 7.3. Size:235K  inchange semiconductor
buk436-200ab.pdf pdf_icon

BUK436-100B

INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK436-200A/B DESCRIPTION Drain Source Voltage- V =200V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance appl

Otros transistores... 60N05-16 , 60N06-18 , 60N10 , 6N70A , 75N06 , 75N10 , 75NF75 , BUK436-100A , AON7410 , BUK436-200A , BUK436-200B , BUK436-60A , BUK436-60B , BUK436-800A , BUK436-800B , BUK438-500A , BUK438-500B .

 

 

 


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