BUK436-200B Todos los transistores

 

BUK436-200B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK436-200B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: TO-3PN

 Búsqueda de reemplazo de MOSFET BUK436-200B

 

BUK436-200B Datasheet (PDF)

 4.1. Size:235K  inchange semiconductor
buk436-200ab.pdf

BUK436-200B BUK436-200B

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK436-200A/BDESCRIPTIONDrain Source Voltage-: V =200V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance appl

 7.1. Size:236K  inchange semiconductor
buk436-800ab.pdf

BUK436-200B BUK436-200B

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK436-800A/BDESCRIPTIONDrain Source Voltage-: V =800V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance appl

 7.2. Size:235K  inchange semiconductor
buk436-100ab.pdf

BUK436-200B BUK436-200B

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK436-100A/BDESCRIPTIONDrain Source Voltage-: V =100V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance appl

 7.3. Size:235K  inchange semiconductor
buk436-60ab.pdf

BUK436-200B BUK436-200B

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK436-60A/BDESCRIPTIONDrain Source Voltage-: V =60V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance applic

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