BUK436-800B Todos los transistores

 

BUK436-800B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK436-800B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
   Paquete / Cubierta: TO-3PN
 

 Búsqueda de reemplazo de BUK436-800B MOSFET

   - Selección ⓘ de transistores por parámetros

 

BUK436-800B Datasheet (PDF)

 4.1. Size:236K  inchange semiconductor
buk436-800ab.pdf pdf_icon

BUK436-800B

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK436-800A/BDESCRIPTIONDrain Source Voltage-: V =800V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance appl

 7.1. Size:235K  inchange semiconductor
buk436-100ab.pdf pdf_icon

BUK436-800B

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK436-100A/BDESCRIPTIONDrain Source Voltage-: V =100V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance appl

 7.2. Size:235K  inchange semiconductor
buk436-60ab.pdf pdf_icon

BUK436-800B

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK436-60A/BDESCRIPTIONDrain Source Voltage-: V =60V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance applic

 7.3. Size:235K  inchange semiconductor
buk436-200ab.pdf pdf_icon

BUK436-800B

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK436-200A/BDESCRIPTIONDrain Source Voltage-: V =200V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance appl

Otros transistores... 75NF75 , BUK436-100A , BUK436-100B , BUK436-200A , BUK436-200B , BUK436-60A , BUK436-60B , BUK436-800A , AO4407 , BUK438-500A , BUK438-500B , BUK444-600A , BUK444-600B , BUK445-100A , BUK445-100B , BUK445-400A , BUK445-400B .

History: OSG50R1K5PF | NCE30H12AK

 

 
Back to Top

 


 
.