FRK250 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FRK250
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 27 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 600 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Paquete / Cubierta: TO-3
Búsqueda de reemplazo de FRK250 MOSFET
FRK250 datasheet
frk250.pdf
FRK250D, FRK250R, FRK250H 27A, 200V, 0.100 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 27A, 200V, RDS(on) = 0.100 TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si)
frk250.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor FRK250 DESCRIPTION 27A, 200V, RDS(on) = 0.1 Second Generation Rad Hard MOSFET Results From New Design Concepts Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures
frk254.pdf
FRK254D, FRK254R, FRK254H 20A, 250V, 0.170 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 20A, 250V, RDS(on) = 0.170 TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si)
Otros transistores... BUK444-600B , BUK445-100A , BUK445-100B , BUK445-400A , BUK445-400B , BUK445-600A , BUK445-600B , FMV09N70E , 2SK3568 , FRM230 , FRM240 , IPP015N04N , IPP023NE7N3 , IPP024N06N3 , IPP030N10N3 , IPP032N06N3 , IPP037N06L3 .
Liste
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