IPP039N10N5 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPP039N10N5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 188 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 830 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de IPP039N10N5 MOSFET
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IPP039N10N5 datasheet
ipp039n10n5.pdf
IPP039N10N5 MOSFET TO-220-3 OptiMOS 5 Power-Transistor, 100 V tab Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free
ipp039n10n5.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP039N10N5 IIPP039N10N5 FEATURES Static drain-source on-resistance RDS(on) 3.9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE
ipp039n04lg ipb039n04lg.pdf
Type IPP039N04L G IPB039N04L G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS Fast switching MOSFET for SMPS R 3.9 m DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on
ipb039n04l-g ipp039n04l-g.pdf
Type IPP039N04L G IPB039N04L G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS Fast switching MOSFET for SMPS R 3.9 m DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on
Otros transistores... FRM240 , IPP015N04N , IPP023NE7N3 , IPP024N06N3 , IPP030N10N3 , IPP032N06N3 , IPP037N06L3 , IPP037N08N3 , STF13NM60N , IPP040N06N3 , IPP048N04N , IPP052NE7N3 , IPP062NE7N3 , IPP065N03L , IPP072N10N3 , IPP084N06L3 , IPP086N10N3 .
History: TK560A60Y | WSF07N10 | STW70N65M2
History: TK560A60Y | WSF07N10 | STW70N65M2
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