IPP039N10N5 Todos los transistores

 

IPP039N10N5 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP039N10N5

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 188 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 830 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de IPP039N10N5 MOSFET

- Selecciónⓘ de transistores por parámetros

 

IPP039N10N5 datasheet

 ..1. Size:1541K  infineon
ipp039n10n5.pdf pdf_icon

IPP039N10N5

IPP039N10N5 MOSFET TO-220-3 OptiMOS 5 Power-Transistor, 100 V tab Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free

 ..2. Size:246K  inchange semiconductor
ipp039n10n5.pdf pdf_icon

IPP039N10N5

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP039N10N5 IIPP039N10N5 FEATURES Static drain-source on-resistance RDS(on) 3.9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE

 7.1. Size:264K  infineon
ipp039n04lg ipb039n04lg.pdf pdf_icon

IPP039N10N5

Type IPP039N04L G IPB039N04L G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS Fast switching MOSFET for SMPS R 3.9 m DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on

 7.2. Size:344K  infineon
ipb039n04l-g ipp039n04l-g.pdf pdf_icon

IPP039N10N5

Type IPP039N04L G IPB039N04L G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS Fast switching MOSFET for SMPS R 3.9 m DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on

Otros transistores... FRM240 , IPP015N04N , IPP023NE7N3 , IPP024N06N3 , IPP030N10N3 , IPP032N06N3 , IPP037N06L3 , IPP037N08N3 , STF13NM60N , IPP040N06N3 , IPP048N04N , IPP052NE7N3 , IPP062NE7N3 , IPP065N03L , IPP072N10N3 , IPP084N06L3 , IPP086N10N3 .

History: TK560A60Y | WSF07N10 | STW70N65M2

 

 

 

 

↑ Back to Top
.