IPP048N04N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP048N04NIIPP048N04NFEATURESStatic drain-source on-resistance:RDS(on) 4.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAX

IPP048N04www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0055 at VGS = 10 V 100COMPLIANT 40 130 nC0.0070 at VGS = 4.5 V 90APPLICATIONS Synchronous RectificationTO-220AB Power SuppliesDGSG D STop ViewN-Channel MOSFETABSOLUT

IPP048N06L G IPB048N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R 4 4 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C

IPP048N06www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0090 Package with Low Thermal ResistanceID (A) 210 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directive 2002/9