IPP052NE7N3 Todos los transistores

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 ipp052ne7n3 ipi052ne7n3.pdf

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 ..2. Size:246K  inchange semiconductor
 ipp052ne7n3.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP052NE7N3 IIPP052NE7N3 FEATURES Static drain-source on-resistance RDS(on) 5.2m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE M

 0.1. Size:844K  infineon
 ipp052ne7n3g ipi052ne7n3g.pdf

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 7.1. Size:683K  infineon
 ipb049n06l3g ipp052n06l3g ipp052n06l3 ipb049n06l3 ipp052n06l3 ipb052n06l3.pdf

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 7.2. Size:1809K  infineon
 ipp052n08n5.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPP052N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPP052N08N5 TO-220-3 1 Description tab Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resis

 7.3. Size:1847K  cn vbsemi
 ipp052n06l3.pdf

IPP052N06L3 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.0035 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.0090 Package with Low Thermal Resistance ID (A) 210 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Directive 2002

 7.4. Size:245K  inchange semiconductor
 ipp052n06l3.pdf

isc N-Channel MOSFET Transistor IPP052N06L3,IIPP052N06L3 FEATURES Static drain-source on-resistance RDS(on) 4.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching for SMPS Optimized technology for DC/DC converters ABSOLUTE MAXIMUM RATINGS(

 7.5. Size:245K  inchange semiconductor
 ipp052n08n5.pdf