IPP084N06L3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPP084N06L3
Código: 084N06L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 79 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 VQgⓘ - Carga de la puerta: 22 nC
trⓘ - Tiempo de subida: 26 nS
Cossⓘ - Capacitancia de salida: 690 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0084 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET IPP084N06L3
IPP084N06L3 Datasheet (PDF)
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ipp084n06l3.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP084N06L3IIPP084N06L3FEATURESStatic drain-source on-resistance:RDS(on) 8.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE M
ipb081n06l3g ipp084n06l3g ipi084n06l3g ipi084n06l3g.pdf
Type IPB081N06L3 G IPP084N06L3 GIPI084N06L3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max (SMD) 8.1m Optimized technology for DC/DC convertersID 50 A Excellent gate charge x R product (FOM)DS(on) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS complian
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ipp080n03l .pdf
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ipp080n03l.pdf
Type IPP080N03L GIPB080N03L GOptiMOS3 Power-TransistorProduct SummaryFeatures .V 30 VDS Fast switching MOSFET for SMPSR 8.0mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R
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ipp08cn10n8.pdf
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ipp083n10n5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 100 VIPP083N10N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 100 VIPP083N10N5TO-220-31 DescriptiontabFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-res
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ipp080n03l.pdf
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ipp086n10n3.pdf
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Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IPP110N20N3G | TF2341 | IPP60R180C7
History: IPP110N20N3G | TF2341 | IPP60R180C7
Liste
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