IPP084N06L3 Todos los transistores

 

IPP084N06L3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPP084N06L3
   Código: 084N06L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 79 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Qgⓘ - Carga de la puerta: 22 nC
   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 690 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0084 Ohm
   Paquete / Cubierta: TO220

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IPP084N06L3 Datasheet (PDF)

 ..1. Size:683K  infineon
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IPP084N06L3
IPP084N06L3

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 ..2. Size:246K  inchange semiconductor
ipp084n06l3.pdf

IPP084N06L3
IPP084N06L3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP084N06L3IIPP084N06L3FEATURESStatic drain-source on-resistance:RDS(on) 8.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE M

 0.1. Size:427K  infineon
ipb081n06l3g ipp084n06l3g ipi084n06l3g ipi084n06l3g.pdf

IPP084N06L3
IPP084N06L3

Type IPB081N06L3 G IPP084N06L3 GIPI084N06L3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max (SMD) 8.1m Optimized technology for DC/DC convertersID 50 A Excellent gate charge x R product (FOM)DS(on) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS complian

 9.1. Size:527K  infineon
ipb08cn10ng ipi08cn10ng ipp08cn10ng.pdf

IPP084N06L3
IPP084N06L3

IPB08CN10N GIPI08CN10N G IPP08CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 8.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 95 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target

 9.2. Size:778K  infineon
ipp086n10n3g ipi086n10n3g ipb083n10n3g ipd082n10n3g.pdf

IPP084N06L3
IPP084N06L3

IPP086N10N3 G IPI086N10N3 GIPB083N10N3 G IPD082N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM)DS(on)ID 80 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED

 9.3. Size:739K  infineon
ipb085n06lg ipp085n06lg.pdf

IPP084N06L3
IPP084N06L3

IPB085N06L G IPP085N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C

 9.4. Size:728K  infineon
ipp080n03l .pdf

IPP084N06L3
IPP084N06L3

Type IPP080N03L GIPB080N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 8.0mWDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 9.5. Size:515K  infineon
ipp08cn10l1.pdf

IPP084N06L3
IPP084N06L3

IPP08CN10L G 2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, logic levelR 8mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 98 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency

 9.6. Size:739K  infineon
ipb080n06ng ipp080n06ng.pdf

IPP084N06L3
IPP084N06L3

IPB080N06N G IPP080N06N G Power-TransistorProduct SummaryFeaturesV D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@BR 7 7 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C >?A=1

 9.7. Size:323K  infineon
ipp080n03l.pdf

IPP084N06L3
IPP084N06L3

Type IPP080N03L GIPB080N03L GOptiMOS3 Power-TransistorProduct SummaryFeatures .V 30 VDS Fast switching MOSFET for SMPSR 8.0mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R

 9.8. Size:757K  infineon
ipp086n10n3-g ipi086n10n3-g ipb083n10n3-g ipd082n10n3-g.pdf

IPP084N06L3
IPP084N06L3

IPP086N10N3 G IPI086N10N3 GIPB083N10N3 G IPD082N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM)DS(on)ID 80 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED

 9.9. Size:750K  infineon
ipp08cn10n8.pdf

IPP084N06L3
IPP084N06L3

$ " " $ " " $$ " " $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 100 VDSR ( 492??6= ?@C>2= =6G6= 8.2 m - @? >2I .) R I46==6?E 82E6 492C86 I AC@5F4E !) ' DS(on) 95 ADR /6CJ =@H @? C6D:DE2?46 DS(on)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@

 9.10. Size:1813K  infineon
ipp083n10n5.pdf

IPP084N06L3
IPP084N06L3

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 100 VIPP083N10N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 100 VIPP083N10N5TO-220-31 DescriptiontabFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-res

 9.11. Size:772K  infineon
ipi08cne8n-g ipp08cne8n-g ipb08cne8n-g ipp08cne8n7.pdf

IPP084N06L3
IPP084N06L3

IPB08CNE8N GIPI08CNE8N G IPP08CNE8N G 2 Power-TransistorProduct SummaryFeaturesV D R ( 492??6= ?@C>2= =6G6=R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n)I DR /6CJ =@H @? C6D:DE2?46 RD n)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8

 9.12. Size:246K  inchange semiconductor
ipp080n03l.pdf

IPP084N06L3
IPP084N06L3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP080N03LIIPP080N03LFEATURESStatic drain-source on-resistance:RDS(on) 8.0mEnhancement mode:Vth =1.0 to 2.2V (VDS = 0 V, ID=250A)Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a

 9.13. Size:245K  inchange semiconductor
ipp083n10n5.pdf

IPP084N06L3
IPP084N06L3

isc N-Channel MOSFET Transistor IPP083N10N5IIPP083N10N5FEATURESStatic drain-source on-resistance:RDS(on) 8.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25

 9.14. Size:246K  inchange semiconductor
ipp086n10n3.pdf

IPP084N06L3
IPP084N06L3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP086N10N3 IIPP086N10N3FEATURESStatic drain-source on-resistance:RDS(on) 8.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IPP110N20N3G | TF2341 | IPP60R180C7

 

 
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History: IPP110N20N3G | TF2341 | IPP60R180C7

IPP084N06L3
  IPP084N06L3
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