IPP086N10N3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPP086N10N3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 125 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 42 nS
Cossⓘ - Capacitancia de salida: 523 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0086 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de IPP086N10N3 MOSFET
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IPP086N10N3 datasheet
..1. Size:246K inchange semiconductor
ipp086n10n3.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP086N10N3 IIPP086N10N3 FEATURES Static drain-source on-resistance RDS(on) 8.2m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE
0.1. Size:778K infineon
ipp086n10n3g ipi086n10n3g ipb083n10n3g ipd082n10n3g.pdf
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM) DS(on) ID 80 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED
0.2. Size:757K infineon
ipp086n10n3-g ipi086n10n3-g ipb083n10n3-g ipd082n10n3-g.pdf
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM) DS(on) ID 80 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED
9.1. Size:527K infineon
ipb08cn10ng ipi08cn10ng ipp08cn10ng.pdf
IPB08CN10N G IPI08CN10N G IPP08CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 8.2 m DS(on),max (TO263) Excellent gate charge x R product (FOM) DS(on) I 95 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target
9.2. Size:739K infineon
ipb085n06lg ipp085n06lg.pdf
IPB085N06L G IPP085N06L G Power-Transistor Product Summary Features V D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> R m , ?> =1G ,' E5AB9?> P ( 381>>581>35=5>C
9.3. Size:728K infineon
ipp080n03l .pdf
Type IPP080N03L G IPB080N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 8.0 mW DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)
9.4. Size:515K infineon
ipp08cn10l1.pdf
IPP08CN10L G 2 Power-Transistor Product Summary Features V 100 V DS N-channel, logic level R 8 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 98 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency
9.5. Size:683K infineon
ipb081n06l3g ipp084n06l3g ipb081n06l3 ipp084n06l3 ipb084n06l33.pdf
pe IPB081N06L3 G IPP084N06L3 G 3 Power-Transistor Product Summary Features V D R #562= 7@C 9 89 7C6BF6?4J DH E49 ?8 2?5 DJ?4 C64 R 1 m - @? >2I -' R ) AE > K65 E649?@=@8J 7@C 4@?G6CE6CD I D R I46==6?E 82E6 492C86 I R AC@5F4E ) ' D n) R ( 492??6= =@8 4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E ?8 , @"- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ $ 7@C E2C86E 2AA= 42E @?
9.6. Size:739K infineon
ipb080n06ng ipp080n06ng.pdf
IPB080N06N G IPP080N06N G Power-Transistor Product Summary Features V D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@B R 7 7 m , ?> =1G ,' E5AB9?> P ( 381>>581>35=5>C >?A=1
9.7. Size:323K infineon
ipp080n03l.pdf
Type IPP080N03L G IPB080N03L G OptiMOS 3 Power-Transistor Product Summary Features . V 30 V DS Fast switching MOSFET for SMPS R 8.0 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R
9.8. Size:750K infineon
ipp08cn10n8.pdf
$ " " $ " " $$ " " $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 100 V DS R ( 492??6= ?@C>2= =6G6= 8.2 m - @? >2I .) R I46==6?E 82E6 492C86 I AC@5F4E !) ' DS(on) 95 A D R /6CJ =@H @? C6D DE2?46 DS(on) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH E49 ?8 2?5 DJ?49C@
9.9. Size:1813K infineon
ipp083n10n5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 100 V IPP083N10N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 100 V IPP083N10N5 TO-220-3 1 Description tab Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-res
9.10. Size:772K infineon
ipi08cne8n-g ipp08cne8n-g ipb08cne8n-g ipp08cne8n7.pdf
IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G 2 Power-Transistor Product Summary Features V D R ( 492??6= ?@C>2= =6G6= R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I D R /6CJ =@H @? C6D DE2?46 R D n) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH E49 ?8
9.11. Size:427K infineon
ipb081n06l3g ipp084n06l3g ipi084n06l3g ipi084n06l3g.pdf
Type IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 60 V Ideal for high frequency switching and sync. rec. RDS(on),max (SMD) 8.1 m Optimized technology for DC/DC converters ID 50 A Excellent gate charge x R product (FOM) DS(on) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS complian
9.12. Size:246K inchange semiconductor
ipp084n06l3.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP084N06L3 IIPP084N06L3 FEATURES Static drain-source on-resistance RDS(on) 8.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE M
9.13. Size:246K inchange semiconductor
ipp080n03l.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP080N03L IIPP080N03L FEATURES Static drain-source on-resistance RDS(on) 8.0m Enhancement mode Vth =1.0 to 2.2V (VDS = 0 V, ID=250 A) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a
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