IPP26CN10N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPP26CN10N
Código: 26CN10N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 71 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 35 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 23 nC
Tiempo de subida (tr): 4 nS
Conductancia de drenaje-sustrato (Cd): 232 pF
Resistencia entre drenaje y fuente RDS(on): 0.026 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET IPP26CN10N
IPP26CN10N Datasheet (PDF)
ipp26cn10n.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP26CN10NIIPP26CN10NFEATURESStatic drain-source on-resistance:RDS(on) 26mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXI
ipb26cn10ng ipd25cn10ng ipi26cn10ng ipp26cn10ng.pdf
IPB26CN10N G IPD25CN10N GIPI26CN10N G IPP26CN10N G OptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 25 mW Excellent gate charge x R product (FOM)DS(on)ID 35 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)
ipb26cn10n-g ipd25cn10n-g ipi26cn10n-g ipp26cn10n-g ipu25cn10n-g.pdf
IPB26CN10N G IPD25CN10N GIPI26CN10N G IPP26CN10N G IPU25CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 25mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 35 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi
ipb260n06n3-g ipp260n06n3-g.pdf
Type IPB260N06N3 G IPP260N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDS Ideal for high frequency switching and sync. rec.R 26mDS(on),max Optimized technology for DC/DC convertersI 27 AD Excellent gate charge x R product (FOM)DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualifie
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
