TK4R3A06PL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK4R3A06PL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 36 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 68 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 48.2 nC
   Tiempo de subida (tr): 10 nS
   Conductancia de drenaje-sustrato (Cd): 600 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0043 Ohm
   Paquete / Cubierta: TO-220F

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TK4R3A06PL Datasheet (PDF)

..1. Size:429K toshiba
tk4r3a06pl.pdf

TK4R3A06PLMOSFETs Silicon N-channel MOS (U-MOS-H)TK4R3A06PLTK4R3A06PLTK4R3A06PLTK4R3A06PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 15.1 nC (typ.)(3) Small o

..2. Size:253K inchange semiconductor
tk4r3a06pl.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK4R3A06PLITK4R3A06PLFEATURESLow drain-source on-resistance:RDS(ON) = 3.3m (typ.) (VGS = 10 V)Enhancement mode:Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOL

9.1. Size:440K toshiba
tk4r3e06pl.pdf

TK4R3E06PLMOSFETs Silicon N-channel MOS (U-MOS-H)TK4R3E06PLTK4R3E06PLTK4R3E06PLTK4R3E06PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 15.1 nC (typ.)(3) Small o

9.2. Size:246K inchange semiconductor
tk4r3e06pl.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK4R3E06PLITK4R3E06PLFEATURESLow drain-source on-resistance:RDS(on) 4.3m. (VGS = 10 V)Enhancement mode:Vth =1.5 to 2.5V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAX

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