BS170ZL1G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BS170ZL1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 0.35 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 0.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Encapsulados: TO-92
Búsqueda de reemplazo de BS170ZL1G MOSFET
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BS170ZL1G datasheet
..1. Size:88K onsemi
bs170g bs170rl1g bs170rlra bs170rlrag bs170rlrmg bs170rlrp bs170rlrpg bs170zl1g.pdf 
BS170G Small Signal MOSFET 500 mA, 60 Volts N-Channel TO-92 (TO-226) Features http //onsemi.com This is a Pb-Free Device* 500 mA, 60 Volts MAXIMUM RATINGS RDS(on) = 5.0 W Rating Symbol Value Unit Drain -Source Voltage VDS 60 Vdc N-Channel Gate-Source Voltage D - Continuous VGS 20 Vdc - Non-repetitive (tp 50 ms) VGSM 40 Vpk Drain Current (Note) ID 0.5 Adc G Total
9.1. Size:77K motorola
bs170rev1x.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BS170/D TMOS FET Switching N Channel Enhancement BS170 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS 1 2 Rating Symbol Value Unit 3 Drain Source Voltage VDS 60 Vdc CASE 29 04, STYLE 30 Gate Source Voltage TO 92 (TO 226AA) Continuous VGS 20 Vdc Non repetitive (tp 50 s) VGSM 40 Vpk
9.2. Size:49K philips
bs170 cnv 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BS170 N-channel vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel vertical D-MOS transistor BS170 DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 60 V vertical D-MOS transistor in TO-92 Gate-source v
9.3. Size:652K fairchild semi
bs170.pdf
April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect High density cell design for low RDS(ON). transistors are produced using Fairchild's proprietary, high Voltage controlled small signal switch. cell density, DMOS technology. These products have been designed to minimize on-state resi
9.4. Size:1298K fairchild semi
bs170 d26z bs170 d27z bs170 d74z bs170 d75z bs170 l34z bs170 mmbf170.pdf
March 2010 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect High density cell design for low RDS(ON). transistors are produced using Fairchild's proprietary, high Voltage controlled small signal switch. cell density, DMOS technology. These products have been designed to minimize on-s
9.5. Size:93K vishay
2n7000kl bs170kl.pdf
2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) VGS(th) (V) ID (A) Pb-free ESD Protected 2000 V Available 2 at VGS = 10 V 0.47 60 1.0 to 2.5 RoHS* APPLICATIONS COMPLIANT 4 at VGS = 4.5 V 0.33 Direct Logic-Level Interface TTL/CMOS Solid-State Relays Drivers Relays,
9.6. Size:58K vishay
2n7000 2n7002 vq1000j-p bs170.pdf
2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 2N7000 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 60 VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 FEATURES BENEFITS APPLICATIONS D
9.7. Size:58K vishay
2n7000 2n7002 vq1000j vq1000p bs170.pdf
2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 2N7000 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 60 VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 FEATURES BENEFITS APPLICATIONS D
9.8. Size:20K diodes
bs170f.pdf
SOT23 N-CHANNEL ENHANCEMENT BS170F MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS S * RDS(ON) = 5 D G PARTMARKING DETAIL MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25 C ID 0.15 mA Pulsed Drain Current IDM 3A Gate Source Voltage VGS 20 V Power Dissipation at Tamb=2
9.9. Size:92K onsemi
bs170g.pdf
BS170G Small Signal MOSFET 500 mA, 60 Volts N-Channel TO-92 (TO-226) Features http //onsemi.com This is a Pb-Free Device* 500 mA, 60 Volts MAXIMUM RATINGS RDS(on) = 5.0 W Rating Symbol Value Unit Drain -Source Voltage VDS 60 Vdc N-Channel Gate-Source Voltage D - Continuous VGS 20 Vdc - Non-repetitive (tp 50 ms) VGSM 40 Vpk Drain Current (Note) ID 0.5 Adc G Total
9.11. Size:61K onsemi
bs170.pdf
BS170 Small Signal MOSFET 500 mA, 60 Volts N-Channel TO-92 (TO-226) Features www.onsemi.com This is a Pb-Free Device* 500 mA, 60 Volts MAXIMUM RATINGS Rating Symbol Value Unit RDS(on) = 5.0 W Drain-Source Voltage VDS 60 Vdc N-Channel Gate-Source Voltage - Continuous VGS 20 Vdc D - Non-repetitive (tp 50 ms) VGSM 40 Vpk Drain Current (Note) ID 0.5 Adc Total Device Di
9.12. Size:67K no
bs170f.pdf
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9.13. Size:15K no
bs170p.pdf
N-CHANNEL ENHANCEMENT BS170P MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 FEATURES * 60 Volt VDS * RDS(on)=5 D G S REFER TO ZVN3306A FOR GRAPHS E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb =25 C ID 270 mA Pulsed Drain Current IDM 3A Gate-Source Voltage VGS 20 V Power Dissipati
9.14. Size:403K shantou-huashan
hbs170.pdf
Shantou Huashan Electronic Devices Co.,Ltd. HBS170 N-Channel Enhancement Mode Field Effect Transistor General Description These products have been designed to minimize on-state resistance TO-92 While provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage,
9.15. Size:15K zetex
bs170pstoa bs170pstob bs170pstz.pdf
N-CHANNEL ENHANCEMENT BS170P MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 FEATURES * 60 Volt VDS * RDS(on)=5 D G S REFER TO ZVN3306A FOR GRAPHS E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb =25 C ID 270 mA Pulsed Drain Current IDM 3A Gate-Source Voltage VGS 20 V Power Dissipati
9.16. Size:17K zetex
bs170fta bs170ftc.pdf
SOT23 N-CHANNEL ENHANCEMENT BS170F MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS S * RDS(ON) = 5 D G PARTMARKING DETAIL MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25 C ID 0.15 mA Pulsed Drain Current IDM 3A Gate Source Voltage VGS 20 V Power Dissipation at Tamb=2
Otros transistores... BS170PSTOB
, BS170PSTZ
, BS170RL1G
, BS170RLRA
, BS170RLRAG
, BS170RLRMG
, BS170RLRP
, BS170RLRPG
, IRFZ44
, BS250CSM4
, BS250FTA
, BS250FTC
, BS250KL-TR1-E3
, BS250PSTOA
, BS250PSTOB
, BS250PSTZ
, BSB008NE2LX
.
History: SI1302DL
| ELM34803AA-N
| BS170RLRA
| KF19N20D
