BS250CSM4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BS250CSM4PCHANNEL ENHANCEMENT MODE IN ACERAMIC SURFACE MOUNT PACKAGE FORMECHANICAL DATAHIGH REL APPLICATIONSDimensions in mm (inches)1.40 0.155.59 0.13(0.055 0.006)(0.22 0.005)0.25 0.03 FEATURES(0.01 0.001)0.23rad.(0.009) VDSS = 45V3 20.23 ID = 0.18A4 1m(0.009) rdson = 14 ohms1.02 0.20 2.03 0.20(0.04 0.008) (0

DISCRETE SEMICONDUCTORSDATA SHEETBS250P-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement mode verticalBS250D-MOS transistorDESCRIPTION QUICK REFERENCE DATAP-channel enhancement modeDrain-source voltage -VDS max. 45 Vvertical D-M

TP0610L/T, VP0610L/T, BS250Vishay SiliconixP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)TP0610L -60 10 @ VGS = -10 V -1 to -2.4 -0.18TP0610T -60 10 @ VGS = -10 V -1 to -2.4 -0.12VP0610L -60 10 @ VGS = -10 V -1 to -3.5 -0.18VP0610T -60 10 @ VGS = -10 V -1 to -3.5 -0.12BS250 -45 14 @ VGS = -10 V -1 to -3.5 -0.18FEATUR

TP0610KL/BS250KLNew ProductVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD ESD Protected: 2000 VV(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (A)APPLICATIONS6 @ VGS = -10 V -0.27-60 -1 to 3060 1 to -3.010 @ VGS = -4.5 V -0.21D Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.D Battery Oper

SOT23 P-CHANNEL ENHANCEMENTBS250FMODE VERTICAL DMOS FETISSUE 3 - JANUARY 1996SDG T I D T I SOT23ABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI D i VD V ID V V V I T I V V ID VD V V I I V V VD V V I D i

P-CHANNEL ENHANCEMENTBS250PMODE VERTICAL DMOS FETISSUE 2 SEPT 93 T V I VD D D T V E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T I T IT DITI D i VD V ID V V V I V V ID VD V T I V I I V V VD V V I ID V V

SOT23 P-CHANNEL ENHANCEMENTBS250FMODE VERTICAL DMOS FETISSUE 3 - JANUARY 1996SDG T I D T I SOT23ABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI D i VD V ID V V V I T I V V ID VD V V I I V V VD V V I D i

P-CHANNEL ENHANCEMENTBS250PMODE VERTICAL DMOS FETISSUE 2 SEPT 93 T V I VD D D T V E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T I T IT DITI D i VD V ID V V V I V V ID VD V T I V I I V V VD V V I ID V V