BS250KL-TR1-E3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BS250KL-TR1-E3  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.27 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15.5 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm

Encapsulados: TO-92

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BS250KL-TR1-E3 datasheet

 ..1. Size:89K  vishay
bs250kl-tr1-e3 tp0610kl bs250kl.pdf pdf_icon

BS250KL-TR1-E3

TP0610KL/BS250KL New Product Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D ESD Protected 2000 V V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (A) APPLICATIONS 6 @ VGS = -10 V -0.27 -60 -1 to 30 60 1 to -3.0 10 @ VGS = -4.5 V -0.21 D Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Oper

 9.1. Size:50K  philips
bs250 cnv 2.pdf pdf_icon

BS250KL-TR1-E3

DISCRETE SEMICONDUCTORS DATA SHEET BS250 P-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode vertical BS250 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA P-channel enhancement mode Drain-source voltage -VDS max. 45 V vertical D-M

 9.2. Size:70K  vishay
tp0610l tp0610t vp0610l vp0610t bs250.pdf pdf_icon

BS250KL-TR1-E3

TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L -60 10 @ VGS = -10 V -1 to -2.4 -0.18 TP0610T -60 10 @ VGS = -10 V -1 to -2.4 -0.12 VP0610L -60 10 @ VGS = -10 V -1 to -3.5 -0.18 VP0610T -60 10 @ VGS = -10 V -1 to -3.5 -0.12 BS250 -45 14 @ VGS = -10 V -1 to -3.5 -0.18 FEATUR

 9.3. Size:80K  diodes
bs250f.pdf pdf_icon

BS250KL-TR1-E3

SOT23 P-CHANNEL ENHANCEMENT BS250F MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 S D G T I D T I SOT23 ABSOLUTE MAXIMUM RATINGS. T V IT D i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I T IT DITI D i VD V ID V V V I T I V V ID VD V V I I V V VD V V I D i

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