BS250PSTZ Datasheet. Equivalente

 ..1. Size:34K  zetex
 bs250pstoa bs250pstob bs250pstz.pdf

P-CHANNEL ENHANCEMENT BS250P MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 T V I VD D D T V E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT D i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C). T I T IT DITI D i VD V ID V V V I V V ID VD V T I V I I V V VD V V I ID V V

 8.1. Size:48K  diodes
 bs250p.pdf

P-CHANNEL ENHANCEMENT BS250P MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 T V I VD D D T V E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT D i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C). T I T IT DITI D i VD V ID V V V I V V ID VD V T I V I I V V VD V V I ID V V

 9.1. Size:50K  philips
 bs250 cnv 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BS250 P-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode vertical BS250 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA P-channel enhancement mode Drain-source voltage -VDS max. 45 V vertical D-M

 9.2. Size:70K  vishay
 tp0610l tp0610t vp0610l vp0610t bs250.pdf

TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L -60 10 @ VGS = -10 V -1 to -2.4 -0.18 TP0610T -60 10 @ VGS = -10 V -1 to -2.4 -0.12 VP0610L -60 10 @ VGS = -10 V -1 to -3.5 -0.18 VP0610T -60 10 @ VGS = -10 V -1 to -3.5 -0.12 BS250 -45 14 @ VGS = -10 V -1 to -3.5 -0.18 FEATUR

 9.3. Size:89K  vishay
 bs250kl-tr1-e3 tp0610kl bs250kl.pdf

TP0610KL/BS250KL New Product Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D ESD Protected 2000 V V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (A) APPLICATIONS 6 @ VGS = -10 V -0.27 -60 -1 to 30 60 1 to -3.0 10 @ VGS = -4.5 V -0.21 D Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Oper

 9.4. Size:80K  diodes
 bs250f.pdf

SOT23 P-CHANNEL ENHANCEMENT BS250F MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 S D G T I D T I SOT23 ABSOLUTE MAXIMUM RATINGS. T V IT D i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I T IT DITI D i VD V ID V V V I T I V V ID VD V V I I V V VD V V I D i

 9.5. Size:16K  semelab
 bs250csm4.pdf

BS250CSM4 P CHANNEL ENHANCEMENT MODE IN A CERAMIC SURFACE MOUNT PACKAGE FOR MECHANICAL DATA HIGH REL APPLICATIONS Dimensions in mm (inches) 1.40 0.15 5.59 0.13 (0.055 0.006) (0.22 0.005) 0.25 0.03 FEATURES (0.01 0.001) 0.23 rad. (0.009) VDSS = 45V 3 2 0.23 ID = 0.18A 4 1 m (0.009) rdson = 14 ohms 1.02 0.20 2.03 0.20 (0.04 0.008) (0

 9.6. Size:60K  zetex
 bs250fta bs250ftc.pdf

SOT23 P-CHANNEL ENHANCEMENT BS250F MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 S D G T I D T I SOT23 ABSOLUTE MAXIMUM RATINGS. T V IT D i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I T IT DITI D i VD V ID V V V I T I V V ID VD V V I I V V VD V V I D i