BSC009NE2LS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BSC009NE2LS Datasheet (PDF)

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BSC009NE2LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for e-fuse and ORing applicationRDS(on),max 0.9 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 38 nC Superior thermal resistanceQG(0V..10V) 126 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-8 P

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MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSC009NE2LS5IData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSC009NE2LS5ISuperSO81 Description5867Features7685 Optimized for high performance buck converters Monolithic integrated Schottky like diode Very low on

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MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSC009NE2LS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSC009NE2LS5SuperSO81 Description5867Features7685 Optimized for high performance buck converters Very low on-resistance R @ V =4.5 VDS(on) GS 100% ava

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BSC007N04LS6MOSFETTDSON-8 FL (enlarged source interconnection)OptiMOSTM 6 Power-Transistor, 40 V876Features5 Optimized for synchronous application Very low on-resistance RDS(on)1 52 6 100% avalanche tested734 8 Superior thermal resistance N-channel4 Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21 2

Otros transistores... BSB012NE2LXI , BSB013NE2LXI , BSB017N03LX3 , BSB044N08NN3G , BSB056N10NN3G , BSB104N08NP3G , BSB165N15NZ3G , BSB280N15NZ3G , 7N65 , BSC009NE2LS5 , BSC009NE2LS5I , BSC010N04LS , BSC010N04LSI , BSC010NE2LSI , BSC011N03LSI , BSC014N03LS , BSC014N03MS .