BSC034N06NS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSC034N06NS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 21 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 560 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm
Paquete / Cubierta: PG-TDSON-8
Búsqueda de reemplazo de MOSFET BSC034N06NS
BSC034N06NS Datasheet (PDF)
bsc034n06ns.pdf
TypeBSC034N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 3.4 mW Superior thermal resistanceID 100 A N-channelQOSS nC 37 Qualified according to JEDEC1) for target applicationsQG(0V..10V) 33 nC Pb-free lead plating; RoHS compliant Hal
bsc034n03ls.pdf
BSC034N03LS GOptiMOS3 Power-MOSFETProduct Summary Features VDS 30 V Fast switching MOSFET for SMPSRDS(on),max 3.4 mW Optimized technology for DC/DC convertersID 100 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Sup
bsc034n03lsg.pdf
BSC034N03LS GOptiMOS3 Power-MOSFETProduct Summary Features VDS 30 V Fast switching MOSFET for SMPSRDS(on),max 3.4 mW Optimized technology for DC/DC convertersID 100 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Sup
bsc034n03ls .pdf
& " & E $;B1= !#& '$=;0@/? &@99-=D 1-?@=1> D Q 2CD CG:D49:?8 ') - . 7@B -'*- 4m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC 1 D1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G D ON Q ( 492??6= &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2D:?
Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: SD5001N
History: SD5001N
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918