BSC046N10NS3G Todos los transistores

BSC046N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 100 V Very low gate charge for high frequency applications RDS(on),max 4.6 mW Optimized for dc-dc conversion ID 100 A N-channel, normal level PG-TDSON-8 Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 150 C operating temperature Pb-free lead plati

% ! % D # A0

% ! % D # A0

% ! % D # A0

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 80 V BSC040N08NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 80 V BSC040N08NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re

& " & $=;0@/? &@99-=D E $;B1= !#& ' D Features 4 m D n) m x Q 2CD CG D49 ?8 ') - . 7@B -'*- D Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC 1) G D ON Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C Q ( 492??6= &@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q -EA6B @B D96B>2= B6C CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D ?8 , @

BSC042N03LS G OptiMOS 3 Power-MOSFET Product Summary VDS 30 V Features RDS(on),max 4.2 mW Fast switching MOSFET for SMPS ID 93 A Optimized technology for DC/DC converters PG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superi

BSC0402NS MOSFET SuperSO8 OptiMOSTM5 Power-Transistor, 150 V 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. Sync. Rec. 100% avalanche tested Superior thermal resistance N-channel 4 Pb-free lead plating; RoHS compliant 1 3 2 2 Halogen-free according to IEC61249-2-21 3 1 4 Low Q rr Product validation Qualified according to

BSC042N03MS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 4.2 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 5.4 100% Avalanche tested ID 93 A N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) DS(on)

BSC042N03S G OptiMOS 2 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 4.2 m DS(on),max Optimized technology for notebook DC/DC converters I 95 A D Qualified according to JEDEC1 for target applications PG-TDSON-8 Logic level / N-channel Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(

BSC040N10NS5SC MOSFET PG-WSON-8-2 OptiMOSTM 5 Power-Transistor, 100 V Features Double sided cooled package-with lowest Junction-top thermal resistance tab 175 C rated Optimized for high performance SMPS, e.g. sync. rec. 5 6 100% avalanche tested 7 8 Superior thermal resistance 4 3 N-channel 2 1 Pb-free lead plating; RoHS compliant Halogen-fr

BSC042N03MS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.2 m DS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 5.4 GS 100% Avalanche tested I 93 A D N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) D

BSC047N08NS3 G OptiMOSTM3 Power-Transistor Product Summary Features V 80 V DS Ideal for high frequency switching and sync. rec. R 4.7 m DS(on),max Optimized technology for DC/DC converters I 100 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) Superior thermal resistance N-channel, normal level 100% avalanche test

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM 5 Power-Transistor, 100 V BSC040N10NS5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOSTM 5 Power-Transistor, 100 V BSC040N10NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior therma

$ $ "9@/; %;+877+;B Features 7 D Q ( @D9=9J54 D538>??EC B53D96931D9?> 4 m D n) m x Q #4513I CG9D389>7 1>4 3?>F5BD5BC 1 D Q H35>5?B=1