SI3851DV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI3851DV
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 12 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: TSOP6

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SI3851DV Datasheet (PDF)

..1. Size:116K vishay
si3851dv.pdf

Si3851DVVishay SiliconixP-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.200 at VGS = - 10 V 1.8 LITTLE FOOT Plus- 300.360 at VGS = - 4.5 V Compliant to RoHS Directive 2002/95/EC 1.2SCHOTTKY PRODUCT SUMMARY VF (V) VKA (V) IF (A)Diode Forwar

9.1. Size:210K vishay
si3850adv.pdf

Si3850ADVVishay SiliconixComplementary MOSFET Half-Bridge (N- and P-Channel)FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.300 at VGS = 4.5 V 1.4 TrenchFET Power MOSFETN-Channel 200.410 at VGS = 3.0 V 1.2 100 % Rg Tested0.640 at VGS = - 4.5 V - 0.96 Compliant to RoHS Directive 2002/95/ECP-Cha

9.2. Size:109K vishay
si3850dv.pdf

Si3850DVVishay SiliconixComplementary MOSFET Half-Bridge (N- and P-Channel)FEATURESPRODUCT SUMMARYD 100% Rg TestedVDS (V) rDS(on) (W) ID (A)0.500 @ VGS = 4.5 V 1.2N-Channel 20N-Channel 200.750 @ VGS = 3.0 V 1.01.00 @ VGS = -4.5 V -0.85P Channel 20P-Channel -201.30 @ VGS = -3.0 V -0.75S2TSOP-6Top ViewG2G1 1 6 S1D D5 D2G2 3 4 S2G1Ordering Informat

9.3. Size:213K vishay
si3853dv.pdf

Si3853DVVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.200 at VGS = - 4.5 V 1.8 LITTLE FOOT Plus- 200.340 at VGS = - 2.5 V Compliant to RoHS Directive 2002/95/EC 1.3SCHOTTKY PRODUCT SUMMARY VF (V) VKA (V) IF (A)Diode Forwa

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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