BSC097N06NS Todos los transistores

 ..1. Size:483K  infineon
 bsc097n06ns.pdf

Type BSC097N06NS OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS V 60 100% avalanche tested 9.7 RDS(on),max mW Superior thermal resistance ID A 46 N-channel QOSS nC 14 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 12 Pb-free lead plating; RoHS complian

 0.1. Size:1301K  infineon
 bsc097n06nst.pdf

BSC097N06NST MOSFET SuperSO8 OptiMOSTM Power-Transistor, 60 V 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 175 C rated 100% avalanche tested Superior thermal resistance 4 N-channel 1 3 2 2 Qualified according to JEDEC1) for target applications 3 1 4 Pb-free lead plating; RoHS compliant Halogen-free accor

 9.1. Size:816K  infineon
 bsc0902ns.pdf

BSC0902NS OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized for high performance Buck converter RDS(on),max 2.6 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A 100% avalanche tested QOSS 16 nC Superior thermal resistance QG(0V..10V) 26 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-8

 9.2. Size:1085K  infineon
 bsc096n10ls5.pdf

BSC096N10LS5 MOSFET SuperSO8 OptiMOSTM5 Power-Transistor, 100 V 5 8 6 7 Features 7 6 8 5 Ideal for high-frequency switching 100% avalanche tested Superior thermal resistance N-channel, logic level 4 Pb-free lead plating; RoHS compliant 1 3 2 2 Halogen-free according to IEC61249-2-21 3 1 4 Optimized for chargers Product validation Fully quali

 9.3. Size:521K  infineon
 bsc090n03lsg.pdf

BSC090N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 9 mW Optimized technology for DC/DC converters ID 48 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio

 9.4. Size:690K  infineon
 bsc0923ndi.pdf

BSC0923NDI Dual N-Channel OptiMOS MOSFET Product Summary Features Q1 Q2 Dual N-channel OptiMOS MOSFET VDS 30 30 V Optimized for high performance Buck converter RDS(on),max VGS=10 V 5 2.8 mW Logic level (4.5V rated) VGS=4.5 V 7 3.7 100% avalanche tested ID 40 40 A Qualified according to JEDEC1) for target applications Pb-free lead plating; R

 9.5. Size:586K  infineon
 bsc0925nd.pdf

BSC0925ND OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Dual N-channel OptiMOS MOSFET RDS(on),max 5 mW Optimized for clean switching ID 40 A 100% avalanche tested QOSS 8.6 nC Superior thermal resistance QG(0V..10V) 13 nC Optimized for high performance Buck converter Qualified according to JEDEC1) for target applications VPhase

 9.6. Size:520K  infineon
 bsc093n04lsg.pdf

BSC093N04LS G OptiMOS 3 Power-Transistor Product Summary Features VDS 40 V Fast switching MOSFET for SMPS RDS(on),max 9.3 mW Optimized technology for DC/DC converters ID 49 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) S

 9.7. Size:1111K  infineon
 bsc094n06ls5.pdf

BSC094N06LS5 MOSFET SuperSO8 OptiMOSTM Power-Transistor, 60 V 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel, logic level 4 Qualified according to JEDEC1) for target applications 1 3 2 2 Pb-free lead plating; RoHS compliant 3 1 4 Halogen-free according t

 9.8. Size:1185K  infineon
 bsc098n10ns5.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 100 V BSC098N10NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 100 V BSC098N10NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal

 9.9. Size:1609K  infineon
 bsc0901ns bsc0901ns .pdf

n-Channel Power MOSFET OptiMOS BSC0901NS Data Sheet 2.1, 2011-09-23 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC0901NS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS

 9.10. Size:693K  infineon
 bsc0921ndi.pdf

BSC0921NDI Dual N-Channel OptiMOS MOSFET Product Summary Features Q1 Q2 Dual N-channel OptiMOS MOSFET VDS 30 30 V Optimized for high performance Buck converter RDS(on),max VGS=10 V 5 1.6 mW Logic level (4.5V rated) VGS=4.5 V 7 2.1 N-channel ID 40 40 A Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant

 9.11. Size:1029K  infineon
 bsc0993nd.pdf

BSC0993ND MOSFET Powerstage 5x6 OptiMOSTM Power-MOSFET, 30 V Features Dual N-channel OptiMOS MOSFET Optimized for clean switching 100% avalanche tested Superior thermal resistance Optimized for wireless charger Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Table

 9.12. Size:791K  infineon
 bsc0904nsi.pdf

BSC0904NSI OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 3.7 mW Integrated monolithic Schottky-like diode ID 78 A Very low on-resistance R @ V =4.5 V DS(on) GS QOSS 12 nC 100% avalanche tested QG(0V..10V) 17 nC Superior thermal resistance N-channel Qualified accordin

 9.13. Size:1526K  infineon
 bsc0906ns.pdf

n-Channel Power MOSFET OptiMOS BSC0906NS Data Sheet 2.0, 2011-06-10 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC0906NS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS

 9.14. Size:1469K  infineon
 bsc0996ns.pdf

BSC0996NS MOSFET SuperSO8 OptiMOS Power-MOSFET, 34 V 5 8 6 7 Features 7 6 8 5 Features Optimized for 5V driver application (Wireless Charging) Low FOM for High Frequency SMPS SW 100% Avalanche tested 4 Improved switching behaviour 1 3 2 2 N-channel 3 1 4 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM)

 9.15. Size:686K  infineon
 bsc090n03ls.pdf

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 9.16. Size:680K  infineon
 bsc090n03msg.pdf

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 9.17. Size:658K  infineon
 bsc0902nsi.pdf

BSC0902NSI OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 2.8 mW Integrated monolithic Schottky-like diode ID 100 A Very low on-resistance R @ V =4.5 V DS(on) GS QOSS 17 nC 100% avalanche tested QG(0V..10V) 24 nC Superior thermal resistance N-channel Qualified accordi

 9.18. Size:1630K  infineon
 bsc0908ns rev3.2.pdf

n-Channel Power MOSFET OptiMOS BSC0908NS Data Sheet 3.2, 2011-09-26 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC0908NS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS

 9.19. Size:679K  infineon
 bsc0911nd.pdf

BSC0911ND Dual N-Channel OptiMOS MOSFET Product Summary Features Q1 Q2 Dual N-channel OptiMOS MOSFET VDS 25 25 V Optimized for high performance Buck converter RDS(on),max VGS=10 V 3.2 1.2 mW Logic level (4.5V rated) VGS=4.5 V 4.8 1.7 N-channel ID 40 40 A Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS complia

 9.20. Size:580K  infineon
 bsc0901nsi.pdf

BSC0901NSI OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 2 mW Integrated monolithic Schottky-like diode ID 100 A Very low on-resistance R @ V =4.5 V DS(on) GS QOSS 28 nC 100% avalanche tested QG(0V..10V) 41 nC Superior thermal resistance N-channel Qualified according to JEDE

 9.21. Size:685K  infineon
 bsc0924ndi.pdf

BSC0924NDI Dual N-Channel OptiMOS MOSFET Product Summary Features Q1 Q2 Dual N-channel OptiMOS MOSFET VDS 30 30 V Integrated monolithic Schottky-like diode RDS(on),max VGS=10 V 5 3.7 mW Optimized for high performance Buck converter VGS=4.5 V 7 5.2 Logic level (4.5V rated) ID 40 40 A 100% avalanche tested Qualified according to JEDEC1) for tar

 9.22. Size:608K  infineon
 bsc0909ns.pdf

BSC0909NS OptiMOS Power-MOSFET Product Summary Features VDS 34 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 9.2 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 11.8 100% Avalanche tested ID 44 A Improved switching behaviour PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate c

 9.23. Size:634K  infineon
 bsc094n03s g.pdf

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 9.24. Size:1052K  infineon
 bsc093n15ns5.pdf

BSC093N15NS5 MOSFET SuperSO8 OptiMOSTM 5 Power-Transistor, 150 V 5 8 6 7 Features 7 6 8 5 N-channel, normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Very low reverse recovery charge (Qrr) 4 150 C operating temperature 1 3 2 2 Pb-free lead plating; RoHS compliant 3 1 4 Qualified according to JEDEC

 9.25. Size:684K  infineon
 bsc0910ndi.pdf

BSC0910NDI Dual N-Channel OptiMOS MOSFET Product Summary Features Q1 Q2 Dual N-channel OptiMOS MOSFET VDS 25 25 V Optimized for high performance Buck converter RDS(on),max VGS=10 V 4.6 1.2 mW Logic level (4.5V rated) VGS=4.5 V 5.9 1.6 100% avalanche tested ID 40 40 A Qualified according to JEDEC1) for target applications Pb-free lead plating;

 9.26. Size:1638K  infineon
 bsc0909ns rev3.2.pdf

n-Channel Power MOSFET OptiMOS BSC0909NS Data Sheet 3.2, 2011-09-26 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC0909NS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS