SI4410DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 91853CSi4410DYHEXFET Power MOSFET N-Channel MOSFETAA Low On-Resistance 1 8S DVDSS = 30V Low Gate Charge2 7S D Surface Mount3 6S D Logic Level Drive4 5G DRDS(on) = 0.0135Top ViewDescriptionThis N-channel HEXFET Power MOSFET is producedusing International Rectifier's advanced HEXFET powerMOSFET technology. The low on-resistance and low gat

PD - 95168Si4410DYPbFHEXFET Power MOSFETl N-Channel MOSFETl Low On-ResistanceAl Low Gate Charge A1 8S DVDSS = 30Vl Surface Mount2 7S Dl Logic Level Drive3 6l Lead-Free S D4 5G D RDS(on) = 0.0135DescriptionTop ViewThis N-channel HEXFET Power MOSFET isproduced using International Rectifier's advancedHEXFET power MOSFET technology. The low on-re

SI4410DYN-channel TrenchMOS logic level FETRev. 03 4 December 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a

PD - 95168Si4410DYPbFHEXFET Power MOSFETl N-Channel MOSFETl Low On-ResistanceAl Low Gate Charge A1 8S DVDSS = 30Vl Surface Mount2 7S Dl Logic Level Drive3 6l Lead-Free S D4 5G D RDS(on) = 0.0135DescriptionTop ViewThis N-channel HEXFET Power MOSFET isproduced using International Rectifier's advancedHEXFET power MOSFET technology. The low on-re

SMD Type MOSFETN-Channel MOSFETSI4410DY (KI4410DY)SOP-8 Features VDS (V) = 30V ID = 10 A (VGS = 10V) 1.50 0.15 RDS(ON) 13.5m (VGS = 10V) RDS(ON) 20m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V

SI4410DY-T1www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

Si4410BDYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0135 at VGS = 10 V 10 TrenchFET Power MOSFET300.020 at VGS = 4.5 V 8 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Battery Switch Load SwitchSO-8DS D1

SI4410BDYwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchS