SI4812DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI4812DY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 13 nC
   trⓘ - Tiempo de subida: 10 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET SI4812DY

SI4812DY Datasheet (PDF)

..1. Size:64K vishay
si4812dy.pdf

Si4812DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeMOSFET PRODUCT SUMMARYFEATURESVDS (V) rDS(on) (W) ID (A)D LITTLE FOOTr Plus Power MOSFETD 100% Rg Tested0.018 @ VGS = 10 V 930300.028 @ VGS = 4.5 V 7.3 SCHOTTKY PRODUCT SUMMARYVSD (V)VDS (V) Diode Forward Voltage IF (A)30 0.50 V @ 1.0 A 1.4DSO-8SD1 8Ordering Information:S D2 7Si4

8.1. Size:249K vishay
si4812bdy.pdf

Si4812BDYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.016 at VGS = 10 V 9.530 LITTLE FOOT Plus Power MOSFET0.021 at VGS = 4.5 V 7.7 100 % Rg TestedSCHOTTKY PRODUCT SUMMARY VSD (V)VDS (V) IF (A)Diode Forward Voltage30 0.

9.1. Size:261K vishay
si4816bdy.pdf

Si4816BDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A) Qg (Typ.)Available0.0185 at VGS = 10 V 6.8 LITTLE FOOT Plus Power MOSFETChannel-1 7.80.0225 at VGS = 4.5 V 6.0 100 % Rg Tested300.0115 at VGS = 10 V 11.4Channel-2 11.60.016 a

9.2. Size:259K vishay
si4816bd.pdf

9.3. Size:271K vishay
si4818dy.pdf

Si4818DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.022 at VGS = 10 V 6.3 LITTLE FOOT PlusChannel-10.030 at VGS = 4.5 V 5.4 Compliant to RoHS directive 2002/95/EC300.0155 at VGS = 10 V 9.5Channel-20.0205 at VGS = 4.5

9.4. Size:96K vishay
si4814dy.pdf

Si4814DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodePRODUCT SUMMARYFEATURESVDS (V) rDS(on) (W) ID (A)D LITTLE FOOTr Plus Integrated SchottkyD Alternative Pinning for Additional Layout0.021 @ VGS = 10 V 7.0Channel 1Channel-1Options0.0325 @ VGS = 4.5 V 5.63030 D 100% Rg Tested0.020 @ VGS = 10 V 7.4Channel 2Channel-2APPLICATIONS0.0265 @

9.5. Size:65K vishay
si4810bdy.pdf

Specification ComparisonVishay SiliconixSi4810BDY vs. Si4810DYDescription: N-Channel, 30 V (D-S) MOSFET with Schottky DiodePackage: SOIC-8Pin Out: IdenticalPart Number Replacements:Si4810BDY Replaces Si4810DYSi4810BDY-E3 (Lead (Pb)-free version) Replaces Si4810DYSi4810BDY-T1 Replaces Si4810DY-T1Si4810BDY-T1-E3 (Lead (Pb)-free version) Replaces Si4810DY-T1ABSOLUTE MAXIMUM R

9.6. Size:277K vishay
si4816dy.pdf

Si4816DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.022 at VGS = 10 V 6.3 LITTLE FOOT Plus Power MOSFETChannel-10.030 at VGS = 4.5 V 5.4 100 % Rg Tested300.013 at VGS = 10 V 10 Compliant to RoHS Directive 2002/95/EC

9.7. Size:50K vishay
si4810dy.pdf

Si4810DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeMOSFET PRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.0135 @ VGS = 10 V 1030300.020 @ VGS = 4.5 V 8SCHOTTKY PRODUCT SUMMARYVSD (V)VDS (V) Diode Forward Voltage IF (A)30 0.53 V @ 3.0 A 4.0D D D DSO-8SD1 8S D Ordering Information:2 7SD3 6 Si4810DYGSi4810DY-T1 (with Tape and Reel)G D4

9.8. Size:79K vishay
si4810bd.pdf

Si4810BDYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) rDS(on) ()ID (A)Pb-free Fast Switching Speed0.0135 at VGS = 10 V 10Available30 Low Gate Charge0.020 at VGS = 4.5 V 8RoHS* 100 % UIS and Rg TestedCOMPLIANTSCHOTTKY PRODUCT SUMMARY APPLICATIONSDiode For

9.9. Size:258K vishay
si4814bd.pdf

Si4814BDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.018 at VGS = 10 V 10 LITTLE FOOT Plus Integrated SchottkyChannel-1 6.60.023 at VGS = 4.5 V 8.5 100 % Rg Tested300.018 at VGS = 10 V 10.5Channel-2 8.9APP

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