BSO303SP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BSO303SP HOptiMOS-P Power-TransistorProduct SummaryFeaturesV -30 VDS single P-Channel in SO8VGS=-4.5 V R 21mDS(on),max Enhancement modeVGS=-2.5 V 31m Logic levelI -9.1 AD 150C operating temperaturePG-DSO-8 Qualified according JEDEC for traget applications Pb-free lead plating; RoHS compliant Halogen-free according to IE

BSO303SP HOptiMOS-P Power-TransistorProduct SummaryFeaturesVDS -30 V single P-Channel in SO8RDS(on),max VGS=-10 V 21mW Enhancement modeVGS=-4.5 V31mW Logic levelID -9.1 A 150C operating temperaturePG-DSO-8 Qualified according JEDEC for traget applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Ty

BSO303P HOptiMOS-P Small-Signal-TransistorProduct SummaryFeaturesVDS -30 V Dual P-Channel in SO8VGS=-10VRDS(on),max 21mW Enhancement modeVGS=-4.5V 32 Logic level ID -8.2 A 150C operating temperature Qualified according JEDEC for target applicationsSO 8 Halogen-free according to IEC61249-2-21 Pb-free lead plating; RoHS compliantType

BSO303P HOptiMOS-P Small-Signal-TransistorProduct SummaryFeaturesVDS -30 V Dual P-Channel in SO8VGS=-10VRDS(on),max 21mW Enhancement modeVGS=-4.5V 32 Logic level ID -8.2 A 150C operating temperature Qualified according JEDEC for target applicationsSO 8 Halogen-free according to IEC61249-2-21 Pb-free lead plating; RoHS compliantType

Preliminary DataBSO 302SNSIPMOS Small-Signal-TransistorFeatures Product SummaryDrain source voltage 30 VVDS Single N channelDrain-Source on-state resistance 0.013RDS(on) Enhancement modeContinuous drain current 9.8 AID Avalanche rated Logic Level dv/dt ratedType Package Ordering CodeBSO 302SN SO 8 Q67041-S4029Maximum Ratings, at Tj = 25

BSO300N03S "9@/; %;+877+;BFeatures VDSQ 2CD CG:D49:?8 ') - . 7@B -'*- m DS(on) maxQ ) AD:>:J65 D649?@=@8I 7@B ?@D63@@

Preliminary DataBSO 304SNSIPMOS Small-Signal-TransistorFeatures Product SummaryDrain source voltage 30 VVDS Single N channelDrain-Source on-state resistance 0.03RDS(on) Enhancement modeContinuous drain current 6.4 AID Avalanche rated Logic Level dv/dt ratedType Package Ordering CodeBSO 304 SN SO 8 Q67000-S4012Maximum Ratings, at Tj = 25

Preliminary DataBSO 307NSIPMOS Small-Signal-TransistorProduct SummaryFeaturesDrain source voltage 30 VVDS Dual N channelDrain-Source on-state resistance 0.05RDS(on) Enhancement modeContinuous drain current 5 AID Avalanche rated Logic Level dv/dt ratedType Package Ordering CodeBSO 307 N SO 8 Q67000-S4012Maximum Ratings, at Tj = 25 C, un

Preliminary DataBSO 305NSIPMOS Small-Signal-TransistorFeatures Product SummaryDrain source voltage 30 VVDS Dual N ChannelDrain-Source on-state resistance 0.035 Enhancement mode RDS(on) Continuous drain current 6 AID Avalanche rated Logic Level dv/dt ratedType Package Ordering CodeBSO 305 N SO 8 Q67041-S4028Maximum Ratings, at Tj = 25 C, unl

BSO301SP HOptiMOS-P Power-TransistorProduct SummaryFeaturesV -30 VDS P-ChannelR 8.0mVGS= 10 VDS(on),max Enhancement modeVGS= 4.5 V12.0 A Logic levelI -14.9 AD 150C operating temperaturePG-DSO-8 Avalanche rated Qualified according JEDEC for target applications Pb-free lead plating; RoHS compliant Halogen-free according to

BSO301SPwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G