SI4816DY Todos los transistores

 

SI4816DY MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SI4816DY

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.3(7.7) A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022(0.013) Ohm

Encapsulados: SO8

 Búsqueda de reemplazo de SI4816DY MOSFET

- Selecciónⓘ de transistores por parámetros

 

SI4816DY datasheet

 ..1. Size:277K  vishay
si4816dy.pdf pdf_icon

SI4816DY

Si4816DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.022 at VGS = 10 V 6.3 LITTLE FOOT Plus Power MOSFET Channel-1 0.030 at VGS = 4.5 V 5.4 100 % Rg Tested 30 0.013 at VGS = 10 V 10 Compliant to RoHS Directive 2002/95/EC

 8.1. Size:261K  vishay
si4816bdy.pdf pdf_icon

SI4816DY

Si4816BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Available 0.0185 at VGS = 10 V 6.8 LITTLE FOOT Plus Power MOSFET Channel-1 7.8 0.0225 at VGS = 4.5 V 6.0 100 % Rg Tested 30 0.0115 at VGS = 10 V 11.4 Channel-2 11.6 0.016 a

 8.2. Size:259K  vishay
si4816bd.pdf pdf_icon

SI4816DY

Si4816BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Available 0.0185 at VGS = 10 V 6.8 LITTLE FOOT Plus Power MOSFET Channel-1 7.8 0.0225 at VGS = 4.5 V 6.0 100 % Rg Tested 30 0.0115 at VGS = 10 V 11.4 Channel-2 11.6 0.016 a

 9.1. Size:271K  vishay
si4818dy.pdf pdf_icon

SI4816DY

Si4818DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.022 at VGS = 10 V 6.3 LITTLE FOOT Plus Channel-1 0.030 at VGS = 4.5 V 5.4 Compliant to RoHS directive 2002/95/EC 30 0.0155 at VGS = 10 V 9.5 Channel-2 0.0205 at VGS = 4.5

Otros transistores... SI3443DVPBF , SI3812DV , SI3851DV , SI3853DV , SI4410DY , SI4435DY , SI4810DY , SI4812DY , 12N60 , SI4818DY , SI4831DY , SI4832DY , SI4833DY , SI6820DQ , SI6821DQ , SI6923DQ , SML1001H9 .

 

 

 

 

↑ Back to Top
.